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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 2
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LITERATURE REVIEW
The current column covers peer-reviewed articles published since 2014 on optical microscopy, optical fault isolation
techniques, photondetectors, andone giant wave. Optical methods and techniques are fundamental tonondestruc-
tive analysis of modern integrated circuits. Note that inclusion in the list does not vouch for the article’s quality,
and category sorting is by no means strict.
If you wish to share an interesting recently published peer-reviewed article with the community, please forward the
citation to the e-mail address listed above and I will try to include it in future installments.
Entries are listed in alphabetical order by first author, then title (in bold), journal, year, volume, and first page. Note
that in some cases bracketed text is inserted into the title to provide clarity about the article subject.
Peer-Reviewed Literature of Interest to Failure Analysis: Optics, Optical Techniques,
and a Ripple in the Universe
Michael R. Bruce, Consultant
• B.P. Abbott et al.: “[Nondestructive] Observation of
Gravitational Waves [Using Laser Interferometry]
from a Binary Black Hole Merger,” Phys. Rev.
Lett., 2016, 116, p. 061102. Also see “Viewpoint:
The First Sounds of Merging Black Holes,” Physics,
Feb. 11, 2016, 9(17),
(Editor’s note: No black holes were destroyed by this
measurement.)
• K. Agarwal, R. Chen, L.S. Koh, et al.: “Crossing the
Resolution Limit inNear-Infrared Imaging of Silicon
Chips: Targeting 10-nmNode Technology,”Phys. Rev.
X, 2015, 5, p. 021014. See also “Synopsis: Zooming in
on Failures,” Physics, May 6, 2015,
• R. Attota, and R.G. Dixson: “Resolving Three-
Dimensional Shape of Sub-50nm Wide Lines with
Nanometer-Scale Sensitivity Using Conventional
Optical Microscopes,” Appl. Phys. Lett., 2014, 105, p.
043101.
• L. Bidani, O. Baharav, M. Sinvani, and Z. Zalevsky:
“Usage of Laser Timing Probe for Sensing of
Programmed Charges in EEPROM Devices,” Dev.
Mater. Reliab., IEEE Trans., 2014, 14, p. 304.
• T.H. Cheng, Y. Chu-Su, C.S. Liu, and C.W. Lin: “Phonon-
Assisted Transient Electroluminescence in Si,” Appl.
Phys. Lett., 2014, 104, p. 261102.
• T.B. Cilingiroglu, A. Uyar, A. Tuysuzoglu, et al.:
“Dictionary-Based Image Reconstruction for
Superresolution in Integrated Circuit Imaging,” Opt.
Express, 2015, 23, p. 15072.
• I. DeWolf, “Relation between Raman Frequency and
Triaxial Stress in Si for Surface and Cross-Sectional
Experiments in Microelectronics Components,” J.
Appl. Phys., 2015, 118, p. 053101.
• R. Horstmeyer, R. Heintzmann, G. Popescu, et al.:
“Standardizing the Resolution Claims for Coherent
Microscopy,” Nat. Photon., 2016, 10, p. 68.
• A. Inglese, J. Lindroos, and H. Savin: “Accelerated
Light-Induced Degradation for Detecting Copper
Contamination in p-Type Silicon,” Appl. Phys. Lett.,
2015, 107, p. 052101.
• W. Lei, J. Antoszewski, F. Jarek, et al.: “Progress,
Challenges, and Opportunities for HgCdTe Infrared
Materials and [MCT] Detectors,” Appl. Phys. Rev., 2015,
2, p. 041303.
• U. Leonhardt and S. Sahebdivan: “[Using Far-Field
Optics for Near-Field Sub-Wavelength Imaging:]
Theory of Maxwell’s Fish Eye with Mutually
Interacting Sources and Drains,” Phys. Rev. A, 2015,
92, p. 053848.
• M.A. Miller, P. Tangyunyong, and E.I. Cole, Jr.:
“Characterization of Electrically-Active Defects in
Ultraviolet Light-Emitting Diodes with Laser-Based
Failure Analysis Techniques,”J. Appl. Phys., 2016, 119,
p. 024505.
• N. Naka, S. Kashiwagi, Y. Nagai et al.: “Micro-Raman
Spectroscopic Analysis of Single Crystal Silicon
Microstructures for Surface Stress,” Jpn. J. Appl.
Phys., 2015, 54, p. 106601.
• C. Park, J.-H. Park, C. Rodriguez, et al.: “Full-Field
Subwavelength Imaging Using a Scattering
Superlens,” Phys. Rev. Lett., 2014, 113, p. 113901.