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39

ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 4

3. M.G. Farooq et al.: “3D Copper TSV Integration, Testing and

Reliability,”

Int. Electron. Dev. Meet. (IEDM),

2011, pp. 7.1.1-7.1.4.

4. C. Schmidt et al.: “Non-Destructive Defect Depth Determination

at Fully Packaged and Stacked Die Devices Using Lock-In

Thermography,”

17th IEEE Int. Symp. Phys. Fail. Anal. Integr. Circuits

(IPFA),

2013, p. 1.

5. C. Schmidt et al.: “Lock-in-Thermography for 3-Dimensional

Localization of Electrical Defects Inside Complex PackagedDevices,”

Int. Sym. Test. Fail. Anal. (ISTFA),

2008, p. 102.

6. A. Orozco et al.: “3D IC/Stacked Device Fault Isolation Using 3D

Magnetic Field Imaging,”

Int. Sym. Test. Fail. Anal. (ISTFA),

2014, pp.

33-37.

7. Y. Cai, Z. Wang, R. Dias, and D. Goyal: “Electro Optical Terahertz

Pulse Reflectometry—An Innovative Fault Isolation Tool,”

Proc. 60th

Electron. Compon. Technol. Conf. (ECTC),

June 1-4, 2010 (Las Vegas,

NV), pp. 1309-15.

8. M.Y. Tay, L. Cao, M. Venkata, L. Tran, W. Donna, W. Qiu, J. Alton, P.F.

Taday, andM. Lin: “AdvancedFault IsolationTechniqueUsingElectro-

Optical Terahertz Pulse Reflectometry,”

Proc. 19th Int. Symp. Phys.

Fail. Anal. Integr. Circuits (IPFA),

July 2-6, 2012 (Singapore).

9. L. Cao, M. Venkata, M.Y. Tay, W. Qiu, J. Alton, P.F. Taday, and

M. Igarashi: “Advanced Fault Isolation Technique Using Electro-

Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D

Flip-Chip Package,”

Proc. 38th Int. Symp. Test. Fail. Anal. (ISTFA),

Nov. 11-15, 2012 (Phoenix, AZ), pp. 21-25.

10. S. Barbeau, J. Alton, andM. Igarashi: “ElectroOptical Terahertz Pulse

Reflectometry—A Fast and Highly Accurate Non-Destructive Fault

Isolation Technique for 3D Flip Chip Packages,”

Proc. 39th

Int. Symp.

Test. Fail. Anal. (ISTFA),

Nov. 3-7, 2013 (San Jose, CA).

11. K.C. Lee, J. Alton, M. Igarashi, and S. Barbeau: “Feature Based Non-

Destructive Fault Isolation in Advanced IC Packages,”

Proc. 40th

Int. Symp. Test. Fail. Anal. (ISTFA),

Nov. 9-13, 2014 (Houston, TX),

pp. 214-18.

12. T. Hrnčíř, J.V. Oboňa, M. Petrenec, J. Michalička, and C. Lang: “How

Xe and Ga FIB Differ in Inducing Lateral Damage on TEM Samples,”

Proc. 38th

Int. Symp. Test. Fail. Anal. (ISTFA),

2015.

13. J. Michael: “Focused Ion Beam Induced Microstructural Alterations:

Texture Development, Grain Growth and Intermetallic Formation,”

J. Microsc. Microanal.,

2011,

17

, pp. 386-97.

14. F. Altmann, J. Beyersdorfer, J. Schischka, M. Krause, G. Franz, and L.

Kwakman: “Cross Section Analysis of Cu Filled TSVs Based on High

Throughput Plasma-FIBMilling,”

Proc. 38th

Int. Symp. Test. Fail. Anal.

(ISTFA),

2012, p. 39.

15. T. Hrnčíř, J. Dluhoš, L. Hladík, E. Moyal, J. Teshima, and J. Kopeček:

“AdvancesinFIB-SEMAnalysisofTSVandSolderBumps—Approaching

Higher Precision, Throughput, and Comprehensiveness,”

Proc. 40th

Int. Symp. Test. Fail. Anal. (ISTFA),

2014.