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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 1

42

PRODUCT NEWS

Larry Wagner, LWSN Consulting Inc.

lwagner10@verizon.net

PRESS RELEASE SUBMISSIONS:

MAGAZINES@ASMINTERNATIONAL.ORG

FEI ANNOUNCES HELIOS G4 DUALBEAM

FEI (Hillsboro, Ore.) announced the new Helios G4

DualBeam series, which offers the highest-throughput

ultrathin transmission electron microscopy (TEM) lamella

preparation for leading-edge semiconductor manufactur-

ing and failure analysis applications. The new DualBeam

series, which includes FX andHXmodels, takes a significant

leap forward in both technological capability and ease of

use.

The new Phoenix focused ion beam makes finer

addition, by offering the ability to achieve sub-3 Å image

resolution in a DualBeam, failure analysis labs can now

dramatically cut time to datawithout compromising image

quality. And, by combining high-resolution imaging and

sample preparation on one system, we have reduced the

amount of valuable lab real estate required.”

For more information: web:

fei.com

; tel: 408.224.4024.

DCG INTRODUCES MERIDIAN M

DCG Systems (Fremont, Calif.) announced the release

of the Meridian M system for isolation of routine and chal-

lenging electrical faults at the wafer level. Offering photon

emission for transistor-level defects and leakage and a

complete portfolio of static laser simulation techniques for

metallization defects, the Meridian M system is a critical

tool to support production-use cases in memory and

foundry failure analysis labs. Its high-sensitivity, extended-

wavelength DBX optics capture even themost challenging

faults, including:

• Large-area process variation in advanced memory

devices that can lead to anomalous leakage

• High-resistivity wordline-to-wordline or bitline-to-

bitline shorts within memory cells

• Resistive faults in low-voltage graphics processing units

and other low-voltage logic circuits

• Any weakly emitting faults requiring long integration

time

The Meridian M system also captures electrical

faults that emit photons primarily in the thermal range

(>1850 nm), such as partial opens, high-ohmic shorts, and

electromigration.

“Static optical fault isolation (OFI) is in a renaissance,”

said Praveen Vedagarbha, business unit manager of the

Meridian Product Group at DCG Systems. “While dynamic

OFI is important for localizing parametric faults, static OFI

is faster and easier to use than its dynamic counterpart

because it does not require docking to a tester or having

the device and tester knowledge necessary to edit the

test program. The speed and ease of use of the Meridian M

system is particularly valuable in early yield ramp, when

rapid feedback to the process engineering team is critical.”

cuts with higher precision and simplifies the creation of

ultrathin (sub-10 nm) lamella for TEM imaging. The FX

is a flexible system that delivers dramatically improved

scanning transmission electronmicroscopy (STEM) resolu-

tion—down to sub-3 Å—and significantly shortens the time

to data for failure analysis. Images can now be obtained

within minutes of completing the lamella, rather than the

hours or days previously required to finalize the images

on a stand-alone S/TEM system. The HX model is geared

specifically for high-throughput TEM lamella production.

It features an automated QuickFlip holder that reduces

sample preparation times.

“FEI is thefirst tomarketwithaTEMsample-preparation

solution capable of making 7-nm-thick lamella, addressing

the needs of our customers who are developing next-

generation devices,” states Rob Krueger, Vice President

and General Manager of FEI’s semiconductor business. “In

Inverted lamella