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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 1
48
LITERATURE REVIEW
T
he current column covers peer-reviewed articles published since 2013 on
reliability, counterfeit electronics, and
reverse engineering
. All of these fields are dependent on failure analysis for their success. Furthermore, failure
mechanisms are fundamental to reliability understanding. Feel free to share the following with your reliability col-
leagues. Note that inclusion in the list does not vouch for the article’s quality, and category sorting is by no means strict.
If you wish to share an interesting recently published peer-reviewed article with the community, please forward the
citation to the e-mail address listed above and I will try to include it in future installments.
Peer-Reviewed Literature of Interest to Failure Analysis: Reliability, Counterfeit Electronics,
and Reverse Engineering
Michael R. Bruce, Consultant
mike.bruce@earthlink.netEntries are listed in alphabetical order by first author,
then title (in bold), journal, year, volume, and first page.
Note that in some cases bracketed text is inserted into the
title to provide clarity about the article subject.
• U. Chand, K.C. Huang, C.Y. Huang, et al.:
“Inves
tigation of Thermal Stability and Reliability of HfO
2
Based Resistive Random Access Memory Devices
with Cross-Bar Structure,”
J. Appl. Phys.,
2015,
117
,
p. 184105.
• M.K. Chen, Y.J. Huang, C.C. Cheng, et al.:
“Failure
Analysis of EOS-Induced Damage at Final Electrical
Testing,”
J. Mater. Sci.: Mater. Electron.,
2014,
25
, p. 596.
• Y. Chen, L. Yang, C. Ye, et al.:
“Failure Mechanism
Dependence and Reliability Evaluation of Non-
Repairable System,”
Reliab. Eng. Syst. Saf.,
2015,
138
,
p. 273.
• S. Chih-Hsiang, K.Y. Soo, and R. Kaushik:
“Ultra-Thin
Dielectric Breakdown in Devices and Circuits: A Brief
Review,”
Microelectron. Reliab.,
2015,
55
, p. 308.
• D.P. Ettisserry, N. Goldsman, A. Akturk, et al.:
“Negative Bias-and-Temperature Stress-Assisted
Activation of Oxygen-Vacancy Hole Traps in
4H-Silicon Carbide Metal-Oxide-Semiconductor
Field-Effect Transistors,”
J. Appl. Phys.,
2015,
118
,
p. 044507.
• U. Guin, D. DiMase, and M. Tehranipoor:
“Counterfeit
Integrated Circuits: Detection, Avoidance, and the
Challenges Ahead,”
J. Electron. Test.: Theory Applic.
(JETTA),
2014,
30,
p. 9.
• U. Guin, D. DiMase, and M. Tehranipoor:
“A Com
prehensive Framework for Counterfeit Defect
Coverage Analysis and Detection Assessment,”
J.
Electron. Test.: Theory Applic. (JETTA),
2014,
30,
p. 25.
• U. Guin, K. Huang, D. DiMase, et al.:
“Counterfeit
Integrated Circuits: A Rising Threat in the Global
Semiconductor Supply Chain,”
Proc. IEEE,
2014,
102,
p. 1207.
• K. Huang, Y. Liu, N. Korolija, et al.:
“Recycled IC
Detection Based on Statistical Methods
,
”
IEEE Trans.
Comput.-AidedDes. Integr. Circuits Syst.,
2015,
34
, p. 947.
• K.E. Kambour, C. Kouhestani, P. McMarr, et al.:
“Negative
Bias Temperature Instability Threshold Voltage Shift
Turnaround in SiGe Channel MOSFETs,”
J. Vac. Sci.
Technol. B,
2015,
33
, p. 022201.
• V.G. Karpov:
“Understanding theMovements of Metal
Whiskers,”
J. Appl. Phys.,
2015,
117
, p. 235303.
• K.T. Kaschani:
“What Is Electrical Overstress? Analysis
and Conclusions,”
Microelectron. Reliab.,
2015,
55
, p.
853.
• C.M. Lin:
“Estimation of ACF Packaging Failure
Probability for IC/Substrate Assemblies with
Different Pad Array Dimensions,”
J. Mater. Sci.: Mater.
Electron.,
2014,
25
, p. 618.
• D. Lock, K.R. Rusimova, T.L. Pan, et al.:
“Atomically
Resolved Real-Space Imaging of Hot Electron
Dynamics [in Si],”
Nature Commun.,
2015,
6
, p. 8365.
• K. Mahmood, P. Carmona, S. Shahbazmohamadi, et al.:
“Real-TimeAutomatedCounterfeit IntegratedCircuit
Detection Using X-Ray Microscopy,”
Appl. Opt.,
2015,
54
, p. D25.
• M. Miao, Y. Zhou, and J.A. Salcedo:
“Compact Failure
Modeling for Devices Subject to Electrostatic
Discharge Stresses—A Review Pertinent to CMOS