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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 4
Reaction with Atomically Thin AlO
x
Interlayers,”
J.
Appl. Phys.,
2015,
118
, p. 235704.
• F. Pei, N. Jadhav, E. Buchovecky, et al.:
“In-Situ
Synchrotron Micro-Diffraction Study of Surface,
Interface, Grain Structure, and Strain/Stress
Evolution during Sn Whisker/Hillock Formation,”
J.
Appl. Phys.,
2016,
119
, p. 105302.
• S. Raghavan, I. Schmadlak, G. Leal, et al.:
“Study of
Chip-Package Interaction Parameters on Interlayer
Dielectric Crack Propagation,”
IEEE Trans. Dev. Mater.
Reliab.,
2014,
14
, p. 57.
• C. Rodenbücher, E. Hildebrandt, K. Szot, et al.:
“Hafnium Carbide [Defect] Formation in Oxygen
DeficientHafniumOxideThinFilms,”
Appl. Phys. Lett.,
2016,
108
, p. 252903.
• H.-Y. Tsai and C.-W. Kuo:
“Thermal Stress and Failure
Location Analysis for Through Silicon Via [TSV] in 3D
Integration,”
J. Mech.,
2016,
32
, p 47.
• B. Vianne, M.-I. Richard, S. Escoubas, et al.:
“[TSV]
Through-Silicon Via-Induced Strain Distribution
in Silicon Interposer,”
Appl. Phys. Lett.,
2015,
106
, p.
141905.
• K.S. Yew, D.S. Ang, L.J. Tang, et al.:
“Study of the
Electrical and Chemical Properties of the Multistep
Deposited and Two-Step (Ultraviolet Ozone cum
Rapid Thermal) Annealed HfO
2
Gate Stack,”
J. Vac.
Sci. Technol. B,
2016,
34
, p. 011205.
• H. Zheng, X. Guo, D. Pei, et al.:
“Effects of Vacuum
Ultraviolet Irradiation on Trapped Charges
and Leakage Currents of Low-k Organosilicate
Dielectrics,”
Appl. Phys. Lett.,
2015,
106
, p. 192905.
• J. Zhu, W. Sun, Y. Wu, et al.:
“Failure Analysis of
Superjunction VDMOS under UIS [Unclamped
Inductive Switching] Condition,”
IEEE Trans. Dev.
Mater. Reliab.,
2014,
14
, p. 523.
Visit the Electronic Device Failure Analysis Society website edfas.org
ABOUT THE COVER
a)
Scanning electron microscopy image of a crystalline corrosion product extracted from a water-cooled laser diode.
Material analysis indicated that the corrosion was from an introduction of potassium bicarbonate on copper metal-
lization.
Photo by Luigi Aranda, Raytheon Failure Analysis Lab, Second Place Winner, Black & White Images.
b)
Conducting failure analysis on wafers in the semiconductor industry often requires analysis of defects on the back-
side of the wafer, which can cause focal issues on scanner toolsets. This defect is an example of a particle that was
not removed and has had several films deposited over top of it.
Photo by Joseph Ziebarth, IM Flash Technologies, LLC,
Second Place Winner, Color Images.
c)
“Fixing a Broken Heart.” An etch artifact on a bond pad after subjecting the unit to ball bond removal.
Photo by Rony
R. Celetaria, Analog Devices Gen. Trias, Inc., Third Place Winner, Black & White Images.
d)
The optical image shows silver dendritic growth on a ground lead (or pin) of a transistor outline can device. The den-
drites originated from the braze alloy and penetrated through the plating layer. The likely cause is improper storage
conditions (excessivemoisture) of the part.
Photo byMartin Serrano, Raytheon Failure Analysis Lab, Third PlaceWinner,
Color Images.
e)
“The Sea Serpent’s Pac-Man.” Solderablemetal Pac-Man structure is not sealing the top of the passivation layer, allow-
ing entrance of contamination under the nickel. This creates a porous or spongy nickel appearance due to corrosion
of the layer by an aged or pH-imbalanced gold bath used in the electroless nickel immersion gold process.
Photo by
Debra L. Yencho, Texas Instruments, Third Place Winner, False Color Images.
f)
“A View fromSpace: River Patterns and Lakes.” The image shows amoisture bubble emanating froma cracked ceramic
capacitor body after a cross-sectional procedure. The false color was added to this scanning electron microscopy
image by using postprocessing software. False color is often useful for accentuatingmaterial differences and features.
The resulting image is reminiscent of a satellite image.
Photo by AndrewOzaeta, Raytheon Failure Analysis Lab, Second
Place Winner, False Color Images.
All images from the 2015 EDFAS Photo Contest.