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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 4 UNIVERSITY HIGHLIGHT
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high-temperature superconductors, and “colossalmagne-
toresistance”materials. Professor Shih’s nanoelectronics
material research group[13] uses STMand AFM to study and
engineer novel materials at the atomic scale. He, along
with Advanced Micro Devices, was one of the first in the
industry to use AFM to characterize 2-Ddopant profiles.[14]
Furthermore, Professors Shih and Keto have developed a
near-field scanning optical microscope to analyze optical
properties of semiconductor heterostructures.[15]
Finally, Professor Alexander Demkov’s group does
both theoretical and experimental work on materials
important to the semiconductor industry.[16] He has been
a contributor to the International Technology Roadmap
for Semiconductors andwas involved in the early develop-
ment of high- and low-k dielectrics for industry. Recently,
he was cited in EE Times[17] for developing ferroelectric
field-effect transistors that canpotentially replace conven-
tional memories such as DRAMs and SRAMs with higher
performance and smaller dimensions.
REFERENCES
1. Reports on Research, Office of the Vice President for Research,
University of Texas at Austin,
reports-on-research, accessed July 19, 2016.
2. Downer Femtosecond Spectroscopy Group, University of Texas at
Austin, /~femtosec/index.html, accessed
July, 19, 2016.
3. M. Lei: “Nonlinear Optical Characterization of Advanced Electronic
Materials,” Dissertation, University of Texas at Austin, 2012.
4. Y. Cho et al.: “Second Harmonic Microscopy of Strain Fields around
Through-Silicon-Vias,” Appl. Phys. Lett., 2016, 108, p. 151602.
5. M. Fink et al.: “A New Positron Source with High Flux and Excellent
Electron-Optical Properties,” Nucl. Instrum. Methods Phys. Res. B,
2007, 261, p. 819.
6. J. Borysow et al.: Raman Spectrometer for Monitoring Traces
of Dissolved Organic and Inorganic Substances, U.S. Patent
8,111,394B1, 2012.
7. J.W. Keto, Laser Spectroscopy andNanoparticle Research, University
of Texas at Austin, /~laser/, accessed
July 27, 2016.
8. D. Stoker et al.: “Optical Third-Harmonic Surface Microscopy Using
Ultra-Short Laser Pulses,” Phys. Status Solidi (c), 2005, 2, p. 3978.
9. “Microwave Impedance Microscopy (MIM),” Nanoscale
ElectroMagnetic Laboratory, The Lai Research Group, University of
Texas at Austin, /~lailab/research.html,
accessed July 27, 2016.
10. K. Lai et al.: “Nanoscale Microwave Microscopy Using Shielded
Cantilever Probes,” Appl. Nanosci., 2011, 1(1), p. 13.
11. W. Kundhikanjana et al.: “UnexpectedSurface Implant Layer inStatic
RandomAccessMemoryDevicesObservedbyMicrowave Impedance
Microscopy,”Semicond. Sci. Technol., 2013, 28, p. 025010.
12. A. De Lozanne, Department of Physics, University of Texas at Austin,
lozanne-alejandro-l?Itemid=1264, accessed July 27, 2016.
13. C.K. Shih, Nanoelectronic Materials Research Group, University of
Texas at Austin, /~nemrg/, accessed
July 27, 2016.
14. M. Barret et al.: “2-D Dopant Profiling in VLSI Devices Using Dopant-
Selective Etching: An Atomic Force Microscopy Study,”IEEE Electron
Dev. Lett., 1995, 16 , p. 118.
15. G. Guttroff et al.: “A Design of Reflection Scanning Near-FieldOptical
Microscope and Its Application to AlGaAs/GaAs Heterostructures,”
Appl. Phys. Lett., 1996, 68 , p. 3620.
16. Advanced Atomic Design Lab, Alex Demkov Group, University of
Texas at Austin, /~aadg/, accessed July
30, 2016.
17. R.C. Johnson, “FeFET to Extend Moore’s Law,” EE Times, Jan. 15,
2015, eetimes.com/document.asp?doc_id=1325307, accessed July
30, 2016.