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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 4
58
LITERATURE REVIEW
T
he current column covers peer-reviewed articles published since 2014 on novel materials, packages, components,
and 3-D integration. Novel materials include low- and high-k dielectrics, while packaging/3-D integration encom-
passes topics such as through-silicon vias, multichip modules, packaging materials, components, and so on. Note
that inclusion in the list does not vouch for the article’s quality, and category sorting is by no means strict.
If you wish to share an interesting recently published peer-reviewed article with the community, please forward the
citation to the e-mail address listed above and I will try to include it in future installments.
Entries are listed in alphabetical order by first author, then title (in bold), journal, year, volume, and first page. Note
that in some cases bracketed text is inserted into the title to provide clarity about the article subject.
Peer-Reviewed Literature of Interest to Failure Analysis: Novel Materials, Packages,
Components, and 3-D Integration
Michael R. Bruce, Consultant
mike.bruce@earthlink.net• A. Alkauskas, M.D. McCluskey, and C.G. Van de Walle:
“Tutorial: Defects in Semiconductors—Combining
Experiment and Theory,”
J. Appl. Phys.,
2016,
119
, p.
181101.
• D. Biswas, M.N. Singh, A.K. Sinha, et al.:
“Effect of
ExcessHafniumonHfO
2
CrystallizationTemperature
and Leakage Current Behavior of HfO
2
/Si Metal-
Oxide-Semiconductor Devices,”
J. Vac. Sci. Technol.
B,
2016,
34
, p. 022201.
• F. Cerbu, O. Madia, D.V. Andreev, et al.:
“Intrinsic
Electron Traps in Atomic-Layer Deposited HfO
2
Insulators,”
Appl. Phys. Lett.,
2016,
108
, p. 222901.
• F.X. Che, L.C. Wai, X. Zhang, et al.:
“Characterization
and Modeling of Fine-Pitch Copper Ball Bonding on
a Cu/Low-k Chip,”
J. Electron. Mater.,
2015,
44
, p. 698.
• Y. Cho, F. Shafiei, M.C. Downer, et al.:
“Second-
Harmonic Microscopy of Strain Fields around
Through-Silicon-Vias [TSVs],”
Appl. Phys. Lett.,
2016,
108
, p. 151602.
• A. Chroneos, E.N. Sgourou, C.A. Londos, et al.:
“Oxygen
Defect Processes in Silicon and SiliconGermanium,”
Appl. Phys. Rev.,
2015,
2
, p. 021306.
• J. Dai, P. Mukundhan, C. Kim, et al.:
“Analysis of a
Picosecond Ultrasonic Method for Measurement
of Stress in a Substrate,”
J. Appl. Phys.,
2016,
119
, p.
105705.
• D. Gao, B. Liu, Z. Xu,
et al.
:
“Failure Analysis of
Nitrogen-Doped Ge
2
Sb
2
Te
5
Phase Change Memory
[Using HRTEM and EDS],”
IEEE Trans. Dev. Mater.
Reliab.,
2016,
16
, p. 74.
• A. Grill:
“PECVD Low and Ultralow Dielectric
Constant Materials: From Invention and Research
toProducts,”
J. Vac. Sci. Technol. B,
2016,
34
, p. 020801.
• E.R. Hsieh and S.S. Chung:
“A Theoretical and
Experimental Evaluation of Surface Roughness
Variation inTrigateMetal OxideSemiconductor Field
Effect Transistors,”
J. Appl. Phys.,
2016,
119
, p. 204502.
• T. Jiang, R.Huang, P.S.Ho, et al.:
“StudyofStressesand
Plasticity inThrough-SiliconVia [TSV] Structures for
3D Interconnects by X-RayMicro-BeamDiffraction,”
IEEE Trans. Dev. Mater. Reliab.,
2014,
14
, p. 698.
• S. Kundu, D. Maurya, M. Clavel, et al.:
“Integration of
Lead-Free Ferroelectric on HfO
2
/Si (100) for High
Performance Non-Volatile Memory Applications,”
Sci. Rep.,
2015,
5
, p. 8494.
• K.W. Lee, J.C. Bea, Y. Ohara, et al.:
“Impacts of Cu
Contamination on Device Reliabilities in 3-D IC
Integration,”
IEEE Trans. Dev. Mater. Reliab.,
2014,
14
,
p. 451.
• Y. Li, P.K.M. Srinath, and D. Goyal:
“A Reviewof Failure
Analysis Methods for Advanced 3D Microelectronic
Packages,”
J. Electron. Mater.,
2016,
45
, p. 116.
• M.J. Mutch, P.M. Lenahan, and S.W. King:
“Defect
Chemistry and Electronic Transport in Low-k
Dielectrics Studied with Electrically Detected
Magnetic Resonance,”
J. Appl. Phys.,
2016,
119
, p.
094102.
• S. Ogawa, R. Asahara, Y. Minoura, et al.:
“Insights into
Thermal Diffusion of GermaniumandOxygenAtoms
in HfO
2
/GeO
2
/Ge Gate Stacks and Their Suppressed