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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 3
50
LITERATURE REVIEW
T
he current column covers peer-reviewed articles published since 2014 onbeam-based analysis techniques, including
atomic, electron, neutron, ion, and x-ray beam technologies. These technologies typically offer the highest resolu-
tion, sometimes down to the atomic level; in addition, focused ion beams are fundamental tomodifying electronic
circuits. Note that inclusion in the list does not vouch for the article’s quality, and category sorting is by no means strict.
If you wish to share an interesting recently published peer-reviewed article with the community, please forward the
citation to the e-mail address listed above and I will try to include it in future installments.
Entries are listed in alphabetical order by first author, then title (in bold), journal, year, volume, and first page. Note
that in some cases bracketed text is inserted into the title to provide clarity about the article subject.
Peer-Reviewed Literature of Interest to Failure Analysis: Beam-Based Analysis Techniques
Michael R. Bruce, Consultant
mike.bruce@earthlink.net• D. Abou-Ras, N. Schäfer, C. Boit, et al.:
“Electron-Beam-
Induced Current [EBIC] Measurementswith Applied
Bias Provide Insight to Locally Resolved Acceptor
Concentrations at
p
-
n
Junctions,”
AIP Adv.,
2015,
5
,
p. 077191.
• M. Barr, A. Fahy, J. Martens, et al.:
“Unlocking New
Contrast in a Scanning Helium Microscope [for
DelicateStructures],”
Nat. Commun.,
2016,
7
, p. 10189;
also see A. Taroni:
“HeliumMicroscopy: Compare and
Contrast,”
Nat. Phys.,
2016,
12
, p. 111.
• C. Bergmann, A. Gröschel, J. Will, andA. Magerl:
“Strain
Relief via Silicon Self-Interstitial Emission in Highly
Boron-Doped Silicon: A Diffuse X-Ray Scattering
Study of Oxygen Precipitation,”
J. Appl. Phys.,
2015,
118
, p. 015707.
• C. Donnelly, M. Guizar-Sicairos, V. Scagnoli, et al.:
“Element-Specific X-Ray Phase Tomography of 3-D
Structures at the Nanoscale,”
Phys. Rev. Lett.,
2015,
114
, p. 115501.
• A. Erko, A. Firsov, R. Gubzhokov, et al.:
“New Parallel
Wavelength-Dispersive Spectrometer Based on
Scanning Electron Microscope [SEM],”
Opt. Express,
2014,
22
, p. 16897.
• A. Fahy, M. Barr, J. Martens, and P.C. Dastoor:
“AHighly
Contrasting Scanning HeliumMicroscope,”
Rev. Sci.
Instrum.,
2015,
86
, p. 023704.
• H. Guo, H. Itoh, C. Wang, et al.:
“Focal Depth
Measurement of Scanning Helium Ion Microscope
[HIM],”
Appl. Phys. Lett.,
2014,
105
, p. 023105.
• M. Kagias, Z. Wang, P. Villanueva-Perez, et al.:
“2D-Omnidirectional Hard-X-Ray Scattering
Sensitivity in a Single Shot [for
the Simultaneous
Acquisition of Scattering Images in All Possible
Directions],
”
Phys. Rev. Lett.,
2016,
116
, p. 093902.
• Y. Kunimune, Y. Shimada, Y. Sakurai, et al.:
“Quanti
tative Analysis of Hydrogen in SiO
2
/SiN/SiO
2
Stacks
UsingAtomProbe Tomography [APT],”
AIPAdv.,
2016,
6
, p. 045121.
• A. Lotnyk, D. Poppitz, U. Ross, et al.:
“Focused High-
and Low-Energy Ion [Beam (FIB)] Milling for TEM
Specimen Preparation,”
Microelectron. Reliab.,
2015,
55
, p. 2119.
• A. Lubk, A. Béché, and J. Verbeeck:
“[Transmission]
Electron Microscopy of Probability Currents at
Atomic Resolution,”
Phys. Rev. Lett.,
2015,
115
,
p. 176101; also see J. Thomas:
“Synopsis: A TEM
That Images Quantum Currents,”
Physics,
Oct
20, 2015, physics.aps.org/synopsis-for/10.1103/
PhysRevLett.115.176101.
• S. Maher, F.P.M. Jjunju, and S. Taylor:
“100 Years
of Mass Spectrometry: Perspectives and Future
Trends,”
Rev. Mod. Phys.,
2015,
87
, p. 113.
• J.J. McClelland, A.V. Steele, B. Knuffman, et al.:
“Bright
Focused Ion Beam [FIB] Sources Based on Laser-
Cooled Atoms,”
Appl. Phys. Rev.,
2016,
3
, p. 011302.
• K. Müller-Caspary, A. Oelsner, and P. Potapov:
“Two-
Dimensional Strain Mapping in Semiconductors
by Nano-Beam [Scanning Transmission] Electron
Diffraction [Microscopy (STEM)] Employing a Delay-
Line Detector,”
Appl. Phys. Lett.,
2015,
107
, p. 072110.
• D.W. Niles, J. Stout, R. Christensen, and R. Rodgers:
“Permittivity of SiO
2
for Estimating Capacitive