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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 3

in Fig. 9(b), because laser stimulations at these locations

do not result in a fail. This is the effect of masking the

compare vectors.

Another experiment was performed by creating a

programmed defect in the active area of some random

logic using a 1340 nm wavelength laser through the

silicon substrate. The device is tested, and the fail log is

collected. Figure 10(a) shows the EeLADA overlay image

for the case of inverting only the first fail cycle of the

failure signature, and Fig. 10(b) shows the case of invert-

ing the last fail cycle on the technical pattern. It should be

remembered that EeLADA is performed on a passing IC.

The black dot denotes the exact programmed defect loca-

tion. The arrows pinpoint the EeLADA signals. It is evident

that although the signal does not precisely coincide with

the defect, the observation within the vicinity of 10 µm is

sufficient to guide and achieve physical failure analysis

success on the bad die. The results from this experiment

demonstrate the potential of employing EeLADA for hard

defect localization. More comprehensive studies are nec-

essary in this aspect.

HARDWARE VERSUS SOFTWARE

APPROACH

While both hardware and software approaches are

able to realize the concept of filtering LADA signals, it is

worth highlighting again that the manner of operation is

significantly different. The lattermethod is not as straight-

forward, but the outcome is congruent, as evidenced

earlier. The idea of matching is more intuitive by using

the comparator circuit. For EeLADA inspection time, the

hardware approach has a slight advantage, because the

dwell time per pixel is shorter since it is no longer neces-

sary to incorporate wait times for the accommodation of

synchronizing and pass/fail pulses in a single test loop.

However, the flipside in thismethod lies in the use of cables

that may not be suited for IC testing speeds above 50MHz.

CONCLUSION

Whenever a LADA event occurs due to a state transi-

tion from fail to pass, the signal relevance to the exact

failing signature is obvious. However, the reverse is not

true. Therefore, signals that arise froma pass-to-fail state

transitionaremore concerning. Normally, they can involve

various combinations in terms of failingpins and cycles, be

it conventional LADA or TR-LADA. EeLADA is an evolution

that resolves this ambiguity to extract relevant signals for

analysis. The fundamentals behind EeLADA have been

detailed in this article. Although EeLADA appears to be a

derivative of LADA, in practice, EeSDL will work as well. As

a final takeaway, it isworth amoment topause and review

the custom way IC failures are debugged. Should defect

localization always be performed directly on failed dice?

The preliminary demonstration of the EeLADA application

to hard defect localization is an exemplary example of

deviating from this rule of thumb.

REFERENCES

1. J.A. Rowlette and M.E. Travis: “Critical Timing Analysis in

Microprocessors Using Near-IR Laser Assisted Device Alteration

(LADA),”

Proc. Int. Test Conf. (ITC),

2003, pp. 264-64.

2. J.G. VanHassel and F. Zachariasse: “Product Debug: Speed Problem

Related to Unexpected RC Delay,”

Proc. Int. Symp. Test. Fail Anal.

(ISTFA),

2010, pp. 206-10.

3. S. Lee et al.: “Marginal Failure Diagnosed with LADA: Case Studies,”

Proc. Int. Symp. Test. Fail. Anal. (ISTFA),

2014, pp. 367-73.

4. A. Douin et al.: “Time Resolved Imaging Using Synchronous

Picosecond Photoelectric Laser Stimulation,”

Microelectron. Reliab.,

2006,

46

, pp. 1514-19.

5. J. Shaw et al.: “Dual Port RAM MBIST Failure Analysis Using Time

Resolved Dynamic Laser Stimulation,”

Proc. Int. Symp. Test. Fail.

Anal. (ISTFA),

2008, pp. 188-92.

6. K. Erington, J. Asquith, and D. Bodoh: “Software Enhanced Time

Resolved Laser Assisted Device Alteration with a Non-Pulsed Laser

Source,”

Proc. Int. Symp. Test. Fail. Anal. (ISTFA),

2009, pp. 43-51.

7. D. Bodoh, K. Erington, and K. Dickson: “Root Cause Analysis

Techniques Using Picosecond Time Resolved LADA,”

Proc. Int. Symp.

Test. Fail. Anal. (ISTFA),

2014, pp. 82-86.

8. S.H. Goh et al.: “Fault Isolation Using Electrically-Enhanced LADA

(EeLADA),”

Proc. Int. Symp. Phys. Fail. Anal. Integr. Circuits (IPFA)

,

2015, pp. 572-76.

9. S.H. Goh et al.: “Electrically-Enhanced LADA (EeLADA) Technique,”

Proc. Int. Symp. Test. Fail. Anal. (ISTFA)

, 2015, pp. 9-15.

ABOUT THE AUTHORS

S.H. Goh

received his B.Eng, and Ph.D. degrees in electrical and computer engineering from the

National University of Singapore. His doctorate research on simulation and implementation of the

aplanatic refractive solid immersion lens was awarded a conference Best Paper and was part of a

team project that received the 2009 Singapore President’s Technology Award. Dr. Goh is currently

with Globalfoundries, Product, Test, and Failure Analysis Division, Singapore, where he leads a team

responsible for product failure diagnostics and advanced methodologies to accelerate yield ramp.

His main focus is on development of dynamic fault isolation techniques, wafer-level fault isolation

methods, and leveraging cross-functional domain knowledge of design, test, and failure analysis to

enhance yield learning. His work has been published in conference proceedings and journals. Dr. Goh is also an active

contributor to IPFA and ISTFA technical committees.