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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 2 failure mechanisms exhibit improved SERs with similar
magnitudes. The authors have shown that these reduced
error rates result from a reduction in charge collection
due to the limited silicon geometry of the fin structure.
Multicell errors are determinedby charge sharing between
physically adjacent SRAM bit cells. Importantly, it was
found that MCU probabilities at a given cluster length of
bit cells decrease significantly with technology progres-
sion, and this is also primarily a result of the decrease in
charge collection inherent in the FinFET.
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ABOUT THE AUTHORS
Anthony S. Oates received a Ph.D. degree in physics from the University of Reading, Reading,
U.K., in 1985. He was then with AT&T Bell Laboratories, where his research centered on studies of
failure mechanisms in CMOS technologies. During this time, he was appointed as a Distinguished
Member of the Technical Staff, and he assumed responsibility for reliability physics development and
CMOS technology process quali cation. Since 2002, Dr. Oates has been with Taiwan Semiconductor
Manufacturing Company, Ltd., Hsinchu, Taiwan, where he is responsible for technology reliability
physics research and holds the position of Fellow of the TSMC academy. He has published more than
100 papers in the eld of microelectronics reliability, and he is the co-holder of seven patents. Dr. Oates is a Fellow of the
IEEE. He is currently the Editor-in-Chief for IEEE Transactions of Device and Materials Reliability. He served as the General
Chair of the International Reliability Physics Symposium in 2001 and was the chair of the IEEE Electron Devices Society
Device Reliability Advisory Committee from 2006 to 2011.
Yi-Pin Fang receivedM.S. andPh.D. degrees inphysics fromNational TsingHuaUniversity, Hsinchu,
Taiwan, in 2000 and 2005, respectively. In 2005, he joined TSMC Hsinchu as a principal engineer; he is
currently a technical manager in the Technology Reliability Physics Department. Dr. Fang is responsible
for the analyses of soft-error-rate reliability issues. His research interests include cell-level soft-error-
rate model setup and TCAD simulations of ion-induced charge collection on devices.