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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 3

22

ESREF 2015 IN TOULOUSE

Marise Bafleur, ESREF 2015 Conference Chair

Philippe Perdu, ESREF 2015 Conference Co-Chair

marise@laas.fr philippe.perdu.cnes@gmail.com

EDFAAO (2016) 3:22-27

1537-0755/$19.00 ©ASM International

®

T

he 26th European Symposium on Reliability of

Electron Devices, Failure Physics and Analysis

(ESREF 2015) was held October 5 to 9, 2015, in

oulouse, France. This was the first time the conference

was hosted by the city of Toulouse, which is aworld center

for aeronautics (Airbus), the European capital of the

space industry, and France’s leader for embedded elec-

tronic systems. The ESREF 2015 Organizing Committee,

led by Conference Chair Marise Bafleur (LAAS, France),

assembledmore than 100 volunteers to successfully stage

the conference, which saw a record attendance of more

than 400.

This international symposium continued to focus on

recent developments and future directions in quality

and reliability management of materials, devices, and

circuits formicro-, nano-, and optoelectronics. It provided

a European forum for developing all aspects of reliabil-

ity management and innovative analysis techniques for

present and future electronic applications through twelve

sessions:

• Session A: Quality and Reliability Assessment—tech-

niques and methods for devices and systems

• SessionB1: SiliconTechnologies andNanoelectronics—

hot carriers, high-k, gate materials

• SessionB3: SiliconTechnologies andNanoelectronics—

electrostatic discharge, latch-up, radiation effects

• Session C: Failure Analysis

• Session D1: Microwave and Power Wide-Bandgap

Semiconductor Devices

ESREF opening session