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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 3
22
ESREF 2015 IN TOULOUSE
Marise Bafleur, ESREF 2015 Conference Chair
Philippe Perdu, ESREF 2015 Conference Co-Chair
marise@laas.fr philippe.perdu.cnes@gmail.comEDFAAO (2016) 3:22-27
1537-0755/$19.00 ©ASM International
®
T
he 26th European Symposium on Reliability of
Electron Devices, Failure Physics and Analysis
(ESREF 2015) was held October 5 to 9, 2015, in
oulouse, France. This was the first time the conference
was hosted by the city of Toulouse, which is aworld center
for aeronautics (Airbus), the European capital of the
space industry, and France’s leader for embedded elec-
tronic systems. The ESREF 2015 Organizing Committee,
led by Conference Chair Marise Bafleur (LAAS, France),
assembledmore than 100 volunteers to successfully stage
the conference, which saw a record attendance of more
than 400.
This international symposium continued to focus on
recent developments and future directions in quality
and reliability management of materials, devices, and
circuits formicro-, nano-, and optoelectronics. It provided
a European forum for developing all aspects of reliabil-
ity management and innovative analysis techniques for
present and future electronic applications through twelve
sessions:
• Session A: Quality and Reliability Assessment—tech-
niques and methods for devices and systems
• SessionB1: SiliconTechnologies andNanoelectronics—
hot carriers, high-k, gate materials
• SessionB3: SiliconTechnologies andNanoelectronics—
electrostatic discharge, latch-up, radiation effects
• Session C: Failure Analysis
• Session D1: Microwave and Power Wide-Bandgap
Semiconductor Devices
ESREF opening session