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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 19 NO. 2
Spectral Composition of Band Luminescence from
SiliconSolar Cells under Optical andElectrical Bias,”
Appl. Phys. Lett.,
2014,
104
, p. 173902.
• D. Lan and M.A. Green:
“Generalised Distributed
Model of a Solar Cell: Lateral Injection Effects and
Impact on Cell Design and Characterization [Using
Luminescent Imaging],”
Sol. Energy Mater. Sol. Cells,
April 2016,
147
, p. 108.
• D. Lausch, T. Mehl, K. Petter, et al.:
“Classification
of Crystal Defects in Multicrystalline Silicon Solar
Cells and Wafer Using Spectrally and Spatially
Resolved Photoluminescence,”
J. Appl. Phys.,
2016,
119
, p. 054501.
• D.D. Lee, W.J. Cho, J.K. Song, et al.:
“Failure Analysis
of Cu(In,Ga)Se
2
Photovoltaic Modules: Degradation
Mechanism of Cu(In,Ga)Se
2
Solar Cells under Harsh
Environmental Conditions,”
Prog. Photovolt.: Res.
Applic.,
2015,
23
, p. 829.
• W. Luo, Y.S. Khoo, P. Hacke, et al.:
“Potential-Induced
Degradation in Photovoltaic Modules: A Critical
Review,”
Energy Environ. Sci.,
2017,
10
, p. 43.
• F.C-P. Massabuau, P. Chen, M.K. Horton, et al.:
“Carrier
Localization in the Vicinity of Dislocations in InGaN,”
J. Appl. Phys.,
2017,
121
, p. 013104.
• L. Meng, A.G. Street, J.C.H. Phang, et al.:
“Application
and Modeling of Single Contact Electron Beam
Induced Current Technique on Multicrystalline
Silicon Solar Cells,”
Sol. Energy Mater. Sol. Cells,
Feb.
2015,
133
, p. 143.
• C. Mounir and U.T. Schwarz:
“Determination of
the Radiative Efficiency of GaN-Based Light-
Emitting Diodes via Bias Dependent Resonant
Photoluminescence,”
Appl. Phys. Lett.,
2017,
110
, p.
011106.
• H. Nakanishi, A. Ito, K. Takayama, et al.:
“Comparison
between Laser Terahertz Emission Microscope and
ConventionalMethods forAnalysisofPolycrystalline
Silicon Solar Cell,”
AIP Adv.,
2015,
5
, p. 117129.
• M. Padilla, C. Reichel, N. Hagedorn, et al.:
“Contact
Fault Characterisation of Complex Silicon Solar
Cells: A Guideline Based on Current Voltage
Characteristics and Luminescence Imaging,”
Prog.
Photovolt: Res. Appl.,
2016,
24
, p. 326.
• M.D. Perez and N.E. Gorji:
“Modeling of Temperature
Profile, Thermal Runaway and Hot Spot in Thin
Film Solar Cells,”
Mater. Sci. Semicond. Process.,
Jan.
2016,
41
, p. 529.
• C.D. Santi, M. Meneghini, M.L. Grassa, et al.:
“Role of
Defects in the Thermal Droop of InGaN-Based Light
Emitting Diodes,”
J. Appl. Phys.,
2016,
119
, p. 094501.
• C. Schuss, K. Leppänen, K. Remes, et al.:
“Detecting
Defects [Using Thermography] in Photovoltaic Cells
and Panels and Evaluating the Impact on Output
Performances,”
IEEE Trans. Instrum. Measure.,
May
2016,
65
, p. 1108.
• V. Steinmann, R.E. Brandt, R. Chakraborty, et al.:
“The
Impact of Sodium Contamination in Tin Sulfide
Thin-Film Solar Cells,”
APL Mater.,
2016,
4
, p. 026103.
• T. Watahiki, Y. Kobayashi, T. Morioka, et al.:
“Analysis of
Short Circuit Current Loss inRear Emitter Crystalline
Si Solar Cell,”
J. Appl. Phys.,
2016,
119
, p. 204501.
• W. Witte, D. Abou-Ras, C. Boit, et al.:
“Gallium
Gradients in Cu(In,Ga)Se
2
Thin-Film Solar Cells,”
Prog. Photovolt: Res. Appl.,
2015,
23
, p. 717.
• G. Yamashita, E. Matsubara, M. Nagai, et al.:
“Sensitive
Monitoring of Photocarrier Densities in the Active
Layer of a Photovoltaic Device with Time-Resolved
Terahertz Reflection Spectroscopy,”
Appl. Phys.
Lett.,
2017,
110
, p. 071108.
• Z. Zhang, D. Guo, B. Wang, et al.:
“ANovel Approach of
High Speed Scratching on Silicon [Solar Cell] Wafers
at Nanoscale Depths of Cut [for the Onset of Either
Chip or Crack Formation],”
Sci. Rep.,
2015,
5,
p. 16395.
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