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edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 21 NO. 2 48 LITERATURE REVIEW T his column covers peer-reviewed articles published since 2017 on optoelectronic devices, solar cells, photovolta- ics, light emitting diodes (LEDs), wide bandgap semiconductors, and III-V materials. As much research is available on these topics, this listing is Part II. More entries were provided as Part I in the February issue of EDFA. Note that inclusion in this list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the above email address and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article topic. Peer-Reviewed Literature of Interest to Failure Analysis: Optoelectronic Devices, Solar Photovoltaics, LEDs, Wide Bandgap Semiconductors, III-V Materials: Part II Michael R. Bruce, Consultant mike.bruce@earthlink.net • S. Ašmontas, J. Gradauskas, A. Sužiedėlis, et al.: “Hot Carrier Impact on Photovoltage Formation in Solar Cells,” Appl. Phys. Lett., 2018, 113, p. 071103. • O. Breitenstein and F. Frühauf: “Alternative Luminescence Image Evaluation [for Solar Cells]— ComparisonwithLock-InThermography,” Sol. Energy Mater. Sol. Cells, 2017, 173, p. 72. • M.F. Cerqueira, L.G. Vieira, A. Alves, et al.: “Raman and IR-ATR Spectroscopy Studies of Heteroepitaxial Structures with a GaN:C Top Layer,” J. Phys. D: Appl. Phys., 2017, 50, p. 365103. • B.C. Chen, K.H. Chen, J.W. Yu, et al.: “Analysis of Junction Temperatures for Groups III–V Semi- conductor Materials of Light-Emitting Diodes,” Opt. Quant. Electron., 2017, 49, p. 183. • M.ADeeb, J. Ledig, J.Wei, et al.: “Photo-AssistedKelvin Probe Force Microscopy Investigation of Three Dimensional GaN [LED] Structures with Various Crystal Facets, Doping Types, and Wavelengths of Illumination,” J. App. Phys., 2017, 122, p. 085307. • R.M. Dix-Peek, E.E. van Dyk, F.J. Vorster, et al.: “Break- down Voltage Mapping through Voltage Dependent ReBEL[(ReverseBiasElectroluminescence)]Intensity [andLBIC]ImagingofMulti-CrystallineSiSolarCells,” Physica B: Condensed Matter, 2018, 535, p. 63. • B. Du, R. Yang, Y. He, et al.: “Nondestructive Inspec- tion, Testing and Evaluation for Si-Based, Thin Film and Multi-Junction Solar Cells: An Over- view,” Renewable and Sustainable Energy Reviews, 2017, 78, p. 1117. • A. Fukuyama, K. Matsuochi, T. Nakamura, et al.: “Investigation of Miniband Formation and Optical Properties of Strain-Balanced InGaAs/GaAsP Superlattice Structure Embedded in p–i–n GaAs Solar Cells [usingPiezoelectric Photothermal (PPT), Photoreflectance (PR), andPhotoluminescence (PL) Methods],” Jpn. J. App. Phys., 2017, 56, p. 08MC07. • A.M. Gilinsky, D.V. Dmitriev, A.I. Toropov, et al.: “Defect- Related Luminescence in InAlAs on InP Grown by Molecular Beam Epitaxy,” Semicond. Sci. Technol., 2017, 32, p. 095009. • H. Hu, S. Zhou, X. Liu, et al.: “Effects of GaN/AlGaN/ Sputtered AlN Nucleation Layers on Performance of GaN-Based Ultraviolet Light-Emitting Diodes,” Scientific Reports, 2017, 7, p. 44627. • X. Hu, T. Chen, J. Xue, et al.: “Absolute Electro- luminescence Imaging Diagnosis of GaAs Thin-Film Solar Cells,” IEEE Photon. J., 2017, 9, p. 1. • N. Kumar, A. Zoladek-Lemanczyk, A.A.Y. Guilbert, et al.: “Simultaneous Topographical, Electrical and Optical Microscopy of Optoelectronic Devices at the Nanoscale [<20 nmSpatial Resolution],” Nanoscale, 2017, 9, p. 2723. • H. Li, H-Y Cheng, W-L Chen, et al.: “ Three Dimensional Characterization of GaN-Based Light EmittingDiode GrownonPatternedSapphire SubstratebyConfocal RamanandPhotoluminescenceSpectromicroscopy,” Scientific Reports, 2017, 7, p. 45519. • L. Muzika, M. Švantner, and M. Kučera: “Lock-In and PulsedThermography for Solar Cell Testing,” Applied Optics, 2018, 57, p. D90.