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edfas.org 49 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 21 NO. 2 • A.M. Pavan, S. Vergura, A. Mellit, et al.: “Explicit Empirical Model for Photovoltaic Devices: Experi- mental Validation,” Sol. Energy, 2017, 155, p. 647. • M. PluskaandA. Czerwinski: “Detrimental Nonlocality in Luminescence Measurements [of Light Emitting Materials],” J. App. Phys., 2017, 122, p. 063105. • V. Pogue, S.N.Melkote, B. Rounsaville, et al.: “TheEffect of Residual Stress on Photoluminescence in Multi- Crystalline Silicon Wafers [used for Photovoltaic Applications],” J. App. Phys., 2017, 121, p. 085701. • L. Quan, K. Xie, R. Xi, et al.: “Compressive Light Beam Induced Current [LBIC] Sensing for Fast Defect Detection in Photovoltaic Cells,” Sol. Energy, 2017, 150, p. 345. • M.A. Reshchikov, A.Usikov,H.Helava, etal.: “Evaluation of the Concentration of Point Defects in GaN,” Scientific Reports, 2017, 7, p. 9297. • P. Song, J. Liu, M. Oliullah, et al.: “Series Resistance Imaging of Silicon Solar Cells by Lock-In Photoluminescence,” Phys. Status Solidi RRL, 2017, 11, p. 1700153. • Z. Sun and M.C. Gupta: “A Study of Laser-Induced Surface Defects in Silicon and Impact on Electrical Properties [in Photovoltaic Devices],” J. App. Phys., 2018, 124, p. 223103. • T. Tanikawa, K. Shojiki, R. Katayama, et al.: “Abso- lute Technique for Measuring Internal Electric Fields in InGaN/GaN Light-Emitting Diodes by Electroreflectance Applicable to All Crystal Orientations,” Appl. Phys. Express, 2017, 10, p. 082101. • T. Tayagaki, K. Makita, H. Mizuno, et al.: “Investigation of the Properties of Semiconductor Wafer Bonding in Multijunction Solar Cells via Metal-Nanoparticle Arrays,” J. App. Phys., 2017, 122, p. 023101. • S. Wasmer, N. Rajsrima, I. Geisemeyer, et al.: “Analytical Modeling of the Temporal Evolution of Hot Spot Temperatures in Silicon Solar Cells,” J. App. Phys., 2018, 123, p. 093105. • H. Yang, F. Wang, H. Wang, et al.: “Performance Deterioration of P-Type Single Crystalline Silicon Solar Modules Affected by Potential Induced Degradation in Photovoltaic Power Plant,” Microelectron. Reliab., 2017, 72, p. 18. • J. Yu, Z. Hao, L. Li, et al.: “Influence of Dislocation Density on Internal Quantum Efficiency of GaN- Based Semiconductors,” AIP Advances, 2017, 7, p. 035321. • Y. Zhu, M.K. Juhl, T. Trupke, et al.: “Photoluminescence Imaging of Silicon Wafers and Solar Cells with Spatially Inhomogeneous Illumination,” IEEE J. Photovolt., 2017, 7, p. 1087. Matching job seekers to employers just got easier with ASM International’s new CareerHub. After logging on to the ASM website, job seekers can upload a resume and do searches on hiring companies for free. Advanced searching allows filtering based on various aspects of electronics, e.g., R&D, manufacturing, or materials. Employers and suppliers can easily post jobs and set up pre-screen criteria to gain access to highly qualified, professional job seekers around the globe. For more information, visit careercenter.asminternational.org . NEW CAREER HUB IS LIVE