edfas.org 39 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 28 NO. 4 LITERATURE REVIEW The current column comprises peer-reviewed articles published since 2022 on thermography and thermal-related phenomena. Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting recently published peer-reviewed article with the community, please forward the citation to the email address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer Reviewed Literature of Interest to Failure Analysis: Thermography and Thermal-Related Phenomena Michael R. Bruce, Consultant mike.bruce@earthlink.net • N.T. Anthony: “Thermal Gradient Induced Failure Mechanisms in High Power Semiconductor Devices Under Operational Stress Conditions,” International Journal of Computer Applications Technology and Research, 2025, 14, p. 97, doi.org/ 10.7753/IJCATR1404.1008. • H.I. Bhatti and X. Li: “Thermal Characterization of Ultrawide Bandgap Semiconductor Devices: A Review,” Adv. Phys. Res., 2025, 4, p. e2500039, doi.org/10.1002/apxr.202500039. • S. Brand, et al.: “Localization Enhancement in Quantitative Thermal Lock-In Analysis using Spatial Phase Evaluation,” Microelectronics Reliability, 2025, 168, p. 115690, doi.org/10.1016/ j.microrel.2025.115690. • Y. Chen, et al.: “Three-Fiber Quantum Dot Probe for Hotspot Thermometry in Electronic Packaging,” Opt. Express, 2026, 34, p. 27583, doi.org/10.1364/ OE.604774. • Z. Dou, et al.: “[Review:] The Development of Thermal Interface Materials,” Nat. Electron., 2025, 8, p. 1146, doi.org/10.1038/s41928-025-01543-7. • K. Du, et al.: “Nanoscale Thermal Imaging of Local Subsurface Defects in Chips,” ACS Appl. Electron. Mater., 2026, 8, p. 1166, doi.org/10.1021/ acsaelm.5c02266. • D.-M. Jeon, et al.: “Temperature Measurements of Metal-Free GaN using a Thermoreflectance-Based Approach Depending on Excitation Wavelength,” Jpn. J. Appl. Phys., 2025, 64, p. 012002, doi.org/ 10.35848/1347-4065/ada904. • C.B. Jeong, et al.: “High-Sensitive Dual-Mode Thermoreflectance Microscopy for the Stationary and Transient Thermal Analysis of Microelectronic Devices,” J. Phys. D: Appl. Phys., 2025, 58, p. 085101, doi.org/10.1088/1361-6463/ad9612. • M.G. Jeong, et al.: “Scanning-Probe-Based Noncontact Thermoreflectance Microscopy with Subwavelength Resolution,” IEEE Transactions on Instrumentation and Measurement, 2025, 74, p. 1, doi.org/10.1109/TIM.2025.3627336. • M. Kim, et al.: “A Review in Thermal Management for Advanced Chip Packaging from Chip to Heat Sink,” Microelectronics Reliability, 2025, 170, p. 115782, doi.org/10.1016/j.microrel.2025.115782. • S. Li, et al.: “In-Situ Temperature Measurement and Scanning Thermal Imaging Based on MicroNano QDs Fluorescence Near-Field Fiber Optic Probe,” J. Lightwave Technol., 2026, 44, p. 3233. • M. Sanogo, et al.: “Improved Thermoreflectance Imaging of Trench IGBT via Focus and Illumination Optimized Reconstruction,” Microelectronics Reliability, 2026, 176, p. 115952, doi.org/10.1016/ j.microrel.2025.115952. • A.M.R. Sharma, et al.: “Lock-In Infrared Illumination for High-Resolution Microscopic Thermal Imaging,” Opt. Lett., 2025, 50, p. 7251, doi.org/ 10.1364/OL.577649. • H. Shi, et al.: “Wide-Field Quantitative Mapping of Thermal Properties and Structural Defects at Deeply Buried Interfaces,” International Journal of Heat and Mass Transfer, 2026, 271, p. 129464, doi.org/10.1016/j.ijheatmasstransfer.2026.129464. • R. Solé, et al.: “Simultaneous Multiwavelength Illumination for Thermoreflectance Sensitivity Enhancement [In Microelectronic Devices],” IEEE
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