edfas.org 27 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 28 NO. 4 interest from a 130 nm node IC were reconstructed, and an opportunity for a significant increase in the measurement speed was demonstrated. The authors expect multiple improvements in imaging capabilities in the future, including in spatial resolution, imaging speed, and the ability to distinguish between different materials present. As previously discussed, the resolution will be driven by the use of more tightly focused electron and x-ray focal spots. To balance the trade-off between image resolution and measurement speed, additional approaches to accelerate data acquisition will be required at the finest spatial resolutions. For example, reconstruction and data acquisition approaches that utilize sparse datasets, such as machine learning-based approaches or compressed sensing, can significantly speed up acquisition time without sacrificing resolution.[17-18] Work is also in progress to leverage the energy thresholding capabilities of the HPCD to enable elemental sensitivity in the 3D reconstruction, with the goal of characterizing feature size, shape, and composition in a single measurement. This would introduce new 3D metrology capabilities that are broadly applicable to semiconductor FA, including for ICs, advanced packaging, and silicon photonics. ACKNOWLEDGMENTS The authors acknowledge collaborators at Sandia National Laboratories for their contributions to the development of the instrumentation and for providing the IC imaged here. This work was performed with funding from the CHIPS Metrology Program at the National Institute of Standards and Technology. 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