edfas.org 47 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 28 NO. 2 field emission scanning electron microscopy (FESEM), FIB, FTIR, gas chromatography mass spectrometry (GC-MS) analysis, inductively coupled plasma mass spectroscopy (ICP-MS), inductively coupled plasma optical emission spectrometry (ICP-OES), ion milling, magnetic current imaging (MCI), mechanical cross-section, micro x-ray fluorescence analysis (uXRF), optical beam induced resistance change (OBIRCH), photon-emission electron microscope (PEM), Raman spectroscopy, reactive ion etching (RIE), scanning transmission electron microscopy (STEM), time-of-flight secondary ion mass spectrometry (ToFSIMS), ultraviolet-visible spectrophotometry (UV-VIS), x-ray diffraction analysis (XRD), and x-ray fluorescence analysis (XRF). SERMA MICROTECH 538 Haggard St., Suite 402 Plano, TX 75074 972.633.0007 serma-microtech.com/failure-analysis/turn-key-failure- analysis Services Offered: Turnkey failure analysis, reverse engineering, and circuit extraction services. Tools and Techniques: Scanning acoustic microscopy (SAM), SEM, EDS, FTIR, real-time x-ray, sample preparation, FIB, decapsulation, backside sample preparation, reverse engineering, product teardowns, transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), mechanical probing, emission microscopy, and thermal-induced voltage alteration (TIVA).
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