edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 28 NO. 2 48 LITERATURE REVIEW The current column comprises peer-reviewed articles published since 2024 on power and discrete electronics (such as SiC and GaN). Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the email address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: Power and discrete Michael R. Bruce, Consultant mike.bruce@earthlink.net • S. Asada, et al.: “Impacts of Single Shockley-Type Stacking Faults on Current Conduction in 4H-SiC PiN Diodes,” J. Appl. Phys., 2024, 136, p. 175702, doi.org/10.1063/5.0238793. • S. Cao, et al.: “Failure Analysis of Heavy IonIrradiated Silicon Carbide Junction Barrier Schottky Diodes,” Microelectronics Reliability, 2024, 157, p. 115401, doi.org/10.1016/j.microrel.2024. 115401. • J. Chen, et al.: “Cause Analysis on Abnormal Defects Between Metal Layers of IGBT Dies for Power Modules,” Microelectronics Reliability, 2025, 167, p. 115642, doi.org/10.1016/j.microrel.2025. 115642. • J. Chen, et al.: “Failure Analysis on the Abnormal Cracking of Si3N4 Ceramic Substrates for SiC Power Modules in New Energy Vehicles,” Microelectronics Reliability, 2024, 155, p. 115373, doi.org/10.1016/ j.microrel.2024.115373. • M. Dammann, et al.: “Reliability and Failure Analysis of AlGaN/GaN HEMT with NiPtAu and PtAu Gate,” Microelectronics Reliability, 2025, 168, p. 115718, doi.org/10.1016/j.microrel.2025.115718. • J. Han, et al.: “Failure Analysis and Simulation of IGBT Under Active and Passive Thermal Cycling,” Microelectronics Reliability, 2025, 167, p. 115638, doi.org/10.1016/j.microrel.2025.115638. • Z. Hu, et al.: “Review of the SiC LDMOS Power Device,” J. Semicond., 2024, 45, p. 081501, doi.org/10.1088/1674-4926/24010029. • Y. Huang, et al.: “Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels,” J. Appl. Phys., 2024, 135, p. 195703, doi.org/10.1063/5.0190242. • T. Kimoto: “[Review:] How We Made the 1000 V Silicon Carbide Schottky Diode,” Nat Electron, 2024, 7, p. 933, doi.org/10.1038/s41928-024-01252-7. • L. Lai, et al.: “Impacts of Silicon Carbide Defects on Electrical Characteristics of SiC Devices,” J. Appl. Phys., 2025, 137, p. 060701, doi.org/10.1063/ 5.0239362. • Y. Lei, et al.: “Fault Diagnosis of SiC MOSFETs Based on Time-Frequency Analysis of Acoustic Emission Signals,” Microelectronics Reliability, 2025, 174, p. 115897, doi.org/10.1016/j.microrel.2025.115897. • H. Li, et al.: “Defects Evolution in Si-Based Laterally Diffused Metal Oxide Semiconductor Chip Under Repetitive Gate Transmission Line Pulse Stress,” J. Appl. Phys., 2025, 137, p. 035701, doi.org/10.1063/ 5.0239681. • K. Mikami, et al.: “Mechanism of Doping-Dependent Fixed Charges in SiC/SiO2 Structure: Defect Formation Related to the Fermi Level During Final Annealing,” J. Appl. Phys., 2025, 14, p. 225303, doi.org/10.1063/5.0298366. • M. Na, et al.: “Observation of Broad Triangular Frank-Type Stacking Faults and Characterization of Stacking Faults with Emission Wavelengths Below 430 nm in 4H-SiC Epitaxial Layers,” Appl. Phys. Lett., 2024, 124, p. 152109, doi. org/10.1063/5.0198216. • M. Östling: “Silicon Carbide Power Devices: Evolution, Applications, and Future
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