edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 28 NO.4 42 ARTERIS FLEXGEN MULTI-DIE ACCELERATES INDUSTRY TRANSITION TO MULTI-DIE CHIPLET-BASED ARCHITECTURE Arteris Inc. has expanded its multi-die portfolio to help semiconductor companies transition from monolithic system-on-chip (SoC) designs to chiplet-based architectures for AI, high power computing, and consumer electronics applications without having to reinvent how data moves through the system. Semiconductor companies are increasingly adopting multi-die architectures to address the demands of AI computing. They are now building sys- tems that extend beyond the practical size limits of a single die, optimizing individual chiplets for different process technologies and dividing a system across multiple dies. This introduces a new challenge: Communication that previously occurred within one SoC must now cross physical chip boundaries, while maintaining performance, efficiency, and predictable traffic behavior. Arteris FlexGen Multi-Die adds die-to-die controller IP for chiplet-to-chiplet interconnect to the Arteris FlexGen smart network-on-chip (NoC) IP, leveraging its cutting- edge AI heuristics and machine learning, and automating NoC topology generation for monolithic and multi-die designs alike. This achieves up to 10 times faster design iterations than traditional manual NoC design methods. Designed for high-performance compute and AI accelerator applications for data centers, automotive, consumer, and industrial electronics applications, FlexGen Multi-Die shortens design cycles, enabling faster timeto-market and multiple design explorations for the most complex systems. For more information, visit arteris.com. GATAN INTRODUCES THE F1-GIF SYSTEM Gatan Inc., an AMETEK business, announces the F1-GIF System, a next-generation energy filtered imaging and electron energy loss spectroscopy (EELS) platform that delivers deeper chemical and structural insight for advanced transmission electron microscopy (TEM) research. The F1-GIF overcomes the traditional tradeoff between energy range and energy resolution, allowing researchers to capture both broad spectral coverage and fine detail in a single acquisition. This reduces the need for multiple exposures, lowering electron dose, shortening acquisition times, and helping protect beam-sensitive samples. At the core of the F1-GIF is a next-generation 5760 × 4096 pixel direct detection sensor paired with advanced electron optics. Together, these innovations deliver more than 4000 eV of energy range with sub-1 eV/channel sampling, enabling high-resolution analysis across a broader spectrum than previously possible. The F1-GIF sys- tem operates across the full TEM accelerating voltage range of 30 to 300 kV, supporting both low- and high-voltage applications on a single platform. This flexibility is especially valuable for emerging materials and advanced semiconductor devices that are increasingly thin, complex, and sensitive to beam damage. Beyond conventional EELS, the F1-GIF integrates highspeed dose fractionation, low dose spectrum imaging, and synchronized 5D STEM workflows within a unified platform. By combining elastic and inelastic scattering information, researchers can correlate chemistry, bonding, structure, orientation, strain, and internal electromagnetic fields while minimizing beam-induced damage. For more information, visit gatan.com. Gatan’s F1-GIF EELS platform delivers deeper chemical and structural insight for advanced TEM research. FlexGen Multi-Die leverages AI-enhanced automation for smarter multi-die SoC and chiplet designs.
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