edfas.org 9 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 28 NO. 3 The application of an EBIRCH bias can further introduce increased signal fluctuation or apparent noise, likely arising from a combination of current-related noise under bias, low-frequency resistance fluctuations, beaminduced instabilities, and measurement-chain limitations. In practice, EBIRCH contrast may therefore appear embedded in a noisy background, particularly when targeting very small resistance changes. Nevertheless, the spatially localized nature of the EBIRCH response often remains preserved, and techniques such as image frame averaging or statistical filtering may be used to suppress uncorrelated background noise and facilitate defect localization. These observations highlight an inherent trade-off in EBIRCH operation: Signal strength and localization accuracy can often be optimized by adjusting beam energy, current, dwell time, and bias level, but more aggressive conditions may compromise quantitative interpretation or long-term device stability or even cure the failure such that the temperature sensitivity is lost when large currents are fed through the defect. EBIRCH is therefore most effective when operated in a controlled, low-damage regime that balances contrast enhancement against beam- and bias-induced perturbations. Despite these constraints, EBIRCH’s combination of low-voltage operation, direct resistance sensitivity, and compatibility with existing EBIC/EBAC instrumentation makes it a flexible and powerful technique for advanced failure analysis. When applied properly, electron-beam interaction can serve not only as a probe but also as a controllable means to enhance resistance contrast in otherwise challenging defect scenarios. CONCLUSIONS This work demonstrates that EBIRCH can successfully localize a wide range of ohmic failures within semiconductor devices using the Kleindiek Nanotechnik EBIC/EBIRCH system. By bridging the gap between EBAC and EBIC, EBIRCH provides a unified framework for analyzing a wide range of electrical defects without the need for high-voltage irradiation or destructive conditioning. The correlation with previously reported EBAC enhancement mechanisms reinforces EBIRCH’s potential as a universal fault isolation tool capable of resolving nanoscale defects in both conductive and resistive domains.[5] REFERENCES 1. S. Zheng, et al.: “Electron-beam-induced Current (EBIC) Imaging Technique to Quicken Polysilicon Defect Localization in MOSFETs,” Microelectronics Reliability, 128, Jan. 2022, p. 114432, doi.org/10. 1016/j.microrel.2021.114432. 2. G. Salviati, et al.: “Assessment of Semiconductors by Scanning Electron Microscopy Techniques,” Comprehensive Semiconductor Science and Technology, Elsevier, 2011, p. 308-356, doi.org/10.1016/ B978-0-44-453153-7.00110-3. 3. G.M. Johnson, et al.: “Distinguishing Between Electron-beam Signals in Probing of SRAM Modules for Yield Management,” SEMI Advanced Semiconductor Manufacturing Conference (ASMC), IEEE, May 2019, p. 1-6, doi.org/10.1109/ASMC.2019.8791824. 4. A. Rummel and G.M. Johnson: “Optimizing EBAC/EBIRCH Analysis in 5 nm Technology,” IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), IEEE, Jul. 2022, p. 1-6, doi.org/10.1109/IPFA55383.2022.9915709. 5. P.T. Ng, et al.: “Enhanced EBAC Localization of Gate Oxide Defects After High Voltage Electron Beam Irradiation,” Microelectronics Reliability, 147, Aug. 2023, p. 115074, doi.org/10.1016/j.microrel.2023.115074. 6. C. Wu and B. Corinne: “Leakage Current Study and Relevant Fault Localization by IR-OBIRCH,” International Symposium on the Physical and Failure Analysis of Integrated Circuits, IEEE, Jun. 2015, p. 267-270, doi.org/10.1109/IPFA.2015.7224394. 7. L. Rigutti and M. Tchernycheva: “Electrical and Electro-Optical Char- acterization of Semiconductor Nanowires,” Characterization of Semi-conductor Heterostructures and Nanostructures, Elsevier, 2013, p. 641-684, doi.org/10.1016/B978-0-444-59551-5.00015-7. ABOUT THE AUTHORS Oscar Recalde-Benitez is a specialist in advanced electron microscopy and nanoscale device characterization. He earned his Dr.-Ing. from the Technical University of Darmstadt, focusing on in situ and operando TEM studies of electronic materials and MIM-based nanoelectronic systems. He currently serves as a research and development engineer at Kleindiek Nanotechnik. His work integrates electron microscopy, FIB-based sample preparation, and functional device testing at the nanoscale, with a strong emphasis on translating research concepts into practical instrumentation. Andreas Rummel studied physics at the Eberhard Karls Universität Tübingen, specializing in electron and force microscopy. He is engaged in applied research and development at Kleindiek Nanotechnik, with a focus on electrical probing techniques such as EBIC, EBAC, and EBIRCH, as well as advanced sample preparation and micro-/nanomanipulation.
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