edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 28 NO. 1 12 acquisition of current information utilizing C-AFM of the same device in depth, without the need to transfer the sample back and forth between the AFM and SEM instruments, thereby saving valuable time. Such a method is useful for increasingly complicated structures, particularly for knowing the specific area of electrical failure in devices such as SRAM, logic, vias, interconnects, and non-visual test failures. More recent advances have increased the analytical power of the AFM-in-SEM technology. Self-sensing conductive probes that are extremely sharp and robust have been designed to detect smaller electrical structures such as SRAM devices.[1] Also, Umberto Celano recently introduced a method of electron beam-induced current mapping on 2D materials using AFM (e-beam excited C-AFM), which has a significant potential for usage in advanced semiconductor FA in the future.[2] ACKNOWLEDGMENTS The authors would like to thank Libor Strakos from Thermo Fisher Scientific, Brno for their assistance with FIB delayering surface preparation, and Umberto Celano from Arizona State University for his support and valuable insights into the semiconductor FA. REFERENCES 1. S. Potocky, et al.: “Coating of Self-Sensing Atomic Force Microscopy Cantilevers with Boron-Doped Nanocrystalline Diamond at Low Temperatures,” Phys. Status Solidi A., 222(5), p. 2400553, doi.org/ 10.1002/pssa.202400553. 2. M.A.R. Laskar, et al.: “Electron-Beam Excited Conductive Atomic Force Microscopy for Back Contact Free, Wafer-Scale and In-Line Compatible Electrical Characterization of 2D Materials,” Advanced Science, 12(44), p. e05113, doi.org/10.1002/advs.202505113. Fig. 2 Workflow of subsequent delayering followed by C-AFM mapping on a 3D NAND structure. ABOUT THE AUTHORS Radek Dao is an application engineer at NenoVision, where he focuses on demonstration measurements, installations, and training new users around the globe. He studied physical engineering and nanotechnology at Brno University of Technology and from the beginning focused on SPM. After gathering valuable experience with UHV cryo STM in Roland Wiesendanger’s group at Universität Hamburg, he returned to NenoVision to continue working with AFM-in-SEM systems. He is a co-author of more than 10 articles about nanoscale imaging, and one of his favorite creative outlets is making eye-catching micrographs and videos of microscope image contests. Ondřej Novotný is a development engineer at NenoVision, where he serves as a system architect for the LiteScope AFM-in-SEM platform and drives the development of new measurement modes. He leads global collaborations on self-sensing probe development and supports system feature design, validation, troubleshooting, customer training, and system installations worldwide. He studied physical engineering and nanotechnology at Brno University of Technology and completed research training at Institut Néel (CNRS/CEA) and the SOLEIL synchrotron through ERASMUS+. He contributes to multi-partner R&D projects focused on in-situ microscopy for advanced materials, energy storage, and semiconductor devices.
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