edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 27 NO. 4 46 LITERATURE REVIEW The current column comprises peer-reviewed articles published since 2023 on reliability, 3D, package, system level, AI, quantum computing, security, reverse engineering, processing, and novel materials. Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the email address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: A Cornucopia of Reliability, 3D, Package, Discretes, System Level, AI, Quantum Computing, Security, Reverse Engineering, Processing, and Novel Materials Michael R. Bruce, Consultant mike.bruce@earthlink.net • A. Chatterjee, et al.: “Effect of Amplitude Measurements on the Precision of Thermal Parameters’ Determination in GaAs using Frequency-resolved Thermoreflectance,” J. Appl. Phys., 2024, 135(22), p. 225101, doi.org/ 10.1063/5.0200067. • R. Fraccaroli, et al.: “Evidence for Double Degradation Regime in Off-state Stressed 100 V GaN Transistors: From Dielectric Failure to Subthreshold Current Increase,” Microelectronics Reliability, 2025, 168, p. 115649, doi.org/10.1016/ j.microrel.2025.115649. • Google Quantum AI and Collaborators: “Quantum Error Correction Below the Surface Code Threshold,” Nature, 2025, 638, p. 920-926, doi.org/ 10.1038/s41586-024-08449-y. • M. Hourai, et al.: “Defect Behavior during Growth of Heavily Phosphorus-doped Czochralski Silicon Crystals. I. Experimental Study,” J. Appl. Phys., 2024, 136(5), p. 055706, doi.org/10.1063/5.0216898. • A. Jan, D.M. Kelly, and G. Di Martino: “[Review:] Shining Light on Devices: New Perspectives in Non-volatile Memory Device and Material Investigation,” APL Electronic Devices, 2025, 1(2), p. 021501, doi.org/10.1063/5.0255061. • T.Y. Kang, H. Lee, and S. Suh: “Non-destructive Fault Diagnosis of Electronic Interconnects by Learning Signal Patterns of Reflection Coefficient in the Frequency Domain,” Microelectronics Reliability, 2024, 162, p. 115518, doi.org/10.1016/j.microrel. 2024.115518. • Z. Lamine, et al.: “Experimental Analysis of NBTI Effects on QDI Circuits with Resistive Bridging Faults,” Microelectronics Reliability, 2024, 163, p. 115544, doi.org/10.1016/j.microrel.2024.115544. • N. Lei, et al.: “The Research on the Infrared Timesequence Imaging Inspection Method for Internal Defects of 3D TSV Packaging,” Microelectronics Reliability, 2025, 166, p. 115608, doi.org/10.1016/ j.microrel.2025.115608. • B. Lescop, et al.: “Corrosion Failure Analysis of Printed Circuit Boards Exposed to H₂S Resulting from the Decomposition of Sargassum Algae,” Microelectronics Reliability, 2025, 170, p. 115784, doi.org/10.1016/j.microrel.2025.115784. • H. Li, et al.: “Study on Electron and Gamma Irradiation Effects and Damage Mechanism of GaN HEMT,” Microelectronics Reliability, 2025, 167, p. 115616, doi.org/10.1016/j.microrel.2025.115616. • J.J. Liou, M. Ziegler, and F. Schwierz: “[Review:] Gigahertz and Terahertz Transistors for 5G, 6G, and Beyond Mobile Communication Systems,” Appl. Phys. Rev., 2024, 11(3), p. 031318, doi.org/ 10.1063/5.0213011; also see A. Thompson: “The Past and Future of Fast Transistors,” Scilight, 2025, 2025(2), p. 021104, doi.org/10.1063/10.0035381. • C.S. Mahinay, et al.: “Intricacies in the Failure Analysis of Integrated Capacitors,” J. Fail. Anal. and Preven., 2024, 24, p. 2058-2073, doi.org/10.1007/ s11668-024-02039-w. • M. Maniscalco, et al.: “Fast Reverse Engineering of Chips using Lasers, Focused Ion Beams, and
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