edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 27 NO. 3 40 LITERATURE REVIEW The current column comprises peer-reviewed articles published since 2023 on beam-based analysis techniques, including atomic, electron, neutron, ion, and x-ray beam technologies. These technologies typically offer the highest resolutions, sometimes down to the atomic level. In addition, focused ion beams (FIB) are fundamental to inspecting and modifying electronic circuits. Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the email address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer Reviewed Literature of Interest to Failure Analysis: Beam-based Analysis Techniques Michael R. Bruce, Consultant mike.bruce@earthlink.net • T.M. Ajayi, N. Shirato, T. Rojas, et al.: “Characterization of Just One Atom using Synchrotron X-rays,” Nature, 2023, 618, 69; also see S. Pelham, Ohio University, “First X-ray of a Single Atom,” ScienceDaily, 31 May 2023, www.sciencedaily. com/releases/2023/05/230531150120.htm. • F.M. Alcorn, C. Perez, E.J. Smoll, et al.: “Resolving the Electron Plume within a Scanning Electron Microscope,” ACS Nano, 2024, 18, p. 33479. • C.S. Bonifacio, W. Hubbard, R. Li, et al.: “TEM Specimen Preparation for STEM-EBIC Analysis of Advanced Semiconductor Devices,” Microscopy and Microanalysis, 2024, 30, p. ozae044.066. • C. Chen, T. Zhang, Y. Lei, et al.: “[Review:] Application and Prospect of In Situ TEM in Wide Bandgap Semiconductor Materials and Devices,” Appl. Phys. Rev., 2025, 12, p. 011326; also see R. Nelson: “Advancing the Reliability of Wide Bandgap Semiconductors through In-situ Transmission Electron Microscopy,” Scilight, 2025, 2025, p. 101104. • J. Dong, H. Bai, Y. Deng, et al.: “[Review:] Transmission Electron Microscopy of Epitaxial Semiconductor Materials and Devices,” J. Phys. D: Appl. Phys., 2025, 58, p. 043001. • T. Dreier, D. Nilsson, and J. Hållstedt: “Fast and Highresolution X-ray Nano Tomography for Failure Analysis in Advanced Packaging,” Microelectron. Reliab., 2025, 168, p. 115694. • M. Esposito, I. Buchanan, L. Massimi, et al.: “Laboratory-based X-ray Dark-field Microscopy,” Phys. Rev. Applied, 2023, 20, p. 064039. • K. Höflich, G. Hobler, F.I. Allen, et al.: “[Review:] Roadmap for Focused Ion Beam Technologies,” Appl. Phys. Rev., 2023, 10, p. 041311. • W.A. Hubbard, C.S. Bonifacio, R. Li, et al.: “Chasing Down Leads: Imaging Conductivity Networks in a FinFET Processor [using STEM EBIC],” Microscopy and Microanalysis, 2024, 30, p. ozae044.072. • W.A. Hubbard and B.C. Regan: “PFIB and STEM EBIC: A Potent Combination for Operando TEM of Electronic Devices,” Microscopy and Microanalysis, 2024, 30, p. ozae044.785. • W.A. Hubbard and B.C. Regan: “TEM Imaging of Bias-Induced Electronic Changes in a GaN HEMT,” Microscopy and Microanalysis, 2024, 30, p. 1435. • J. Hwang, C. Lee, K. Lee, et al.: “Novel Inspection Technology for Detecting via Open using Parallel E-beam Scanning and Graphic Design System,” J. Vac. Sci. Technol. B 1, 2025, 43, p. 034001. • P. Jacob, D. MacMahon, and S. Kurinec: “Failure Analysis of Shorting Issues in Bipolar Junction Transistors Circuit using Electron Beam Induced Current Technique,” Jpn. J. Appl. Phys., 2025, 64, p. 03SP13. • N.A. von Jeinsen, S.M. Lambrick, M. Bergin, et al.: “2D Helium Atom Diffraction from a Microscopic Spot,” Phys. Rev. Lett., 2023, 131, p. 236202; also see P. Roncin and W. Allison: “Atom Diffraction from a Microscopic Spot,” Physics, 2023, 16, p. 205. • K. Kobayashi, Y. Mori, K. Konishi, et al.: “Nondestructive Detection of Sub-micrometer-sized
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