edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 27 NO. 2 36 ULTRA-HIGH-SPEED DRAM TEST SYSTEM The T5801 ultra-high-speed DRAM test system from Advantest Corp. is engineered to support the latest advancements in high-speed memory technologies— including GDDR7, LPDDR6, and DDR6— critical to meeting the growing demands of artificial intelligence (AI), highperformance computing (HPC), and edge applications. innovations such as GDDR7, which is central to achieving ultra-low latency in all AI environments. Its scalable testing infrastructure enables a seamless transition from engineering R&D to production, offering flexible configurations and full compatibility with existing handlers and interfaces. For more information, visit advantest.com. FULL WAFER-SCALE FABRICATION OF GaAs-BASED NANO-RIDGE LASERS Imec reached a significant milestone in silicon photonics with the successful demonstration of electrically driven GaAs-based multi-quantum-well nano-ridge laser diodes that were fully, monolithically, fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line. Achieving room-temperature continuous-wave lasing with threshold currents as low as 5 mA and output powers exceeding 1 mW, the results demonstrate the potential of direct epitaxial growth of high-quality III-V materials on silicon. This breakthrough provides a pathway to the development of cost-effective, high-performance optical devices for applications in data communications, machine learning and artificial intelligence. Leveraging the low-defectivity GaAs nano-ridge structures, the lasers integrate InGaAs multiple quantum wells as the optical gain region, embedded in an in-situ doped p-i-n diode and passivated with an InGaP capping layer. Achieving room-temperature, continuous-wave operation with electrical injection is a major advancement, overcoming challenges in current delivery and interface engineering. The devices show lasing at ~1020 nm with threshold currents as low as 5 mA, slope efficiencies up to 0.5 W/A, and optical powers reaching 1.75 mW, showcasing a scalable pathway for high-performance silicon-integrated light sources. For more information, visit imec-int.com. Increasingly complex, high-speed memory technologies are pushing the boundaries of data center and AI performance. The T5801 is tailored to address this challenge by enabling accurate and efficient mass production testing for the highest-speed memory devices. Featuring an innovative front-end unit architecture, the system is uniquely equipped to handle the rigorous requirements of next-generation DRAM modules, delivering industry-leading performance of up to 36 Gbps PAM3 and 18 Gbps NRZ. “As AI accelerators and edge computing continue to evolve, memory bandwidth is becoming a potential bottleneck for overall system performance,” says Masayuki Suzuki, executive officer and memory test business unit general manager at Advantest. “The T5801 ensures that our customers can validate the performance of next-generation DRAMs with precision, speed, and reliability, ensuring their ability to bring them to market quickly.” The T5801’s support for PAM3, a first in JEDEC-standard DRAMs, highlights the system’s capacity to handle memory Advantest’s T5801 ultra-high-speed DRAM test system. A 300 mm silicon wafer containing thousands of GaAs devices with a close-up of multiple dies and a SEM micrograph of a GaAs nano-ridge array after epitaxy.
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