edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 27 NO. 2 10 microscopy and in-situ SIMS allows for the precise correlation of topographic and chemical information of the CIGS solar cell. The ability to acquire full mass spectra for each scanned pixel within the chosen field of view enables a comprehensive analysis of the solar cell and especially of the Rb distribution (Figs. 4 and 5). This functionality is crucial for applications in microelectronics, where detailed high-resolution elemental and structural information is necessary to understand the material properties and identify defects. AUTOMATION AND WORKFLOW EFFICIENCY The integration of a laser interferometer stage with CAD-based navigation and the magnetic-sector SIMS unit offers significant potential for automated workflows. This setup is particularly beneficial for applications such as buried defect review and residue detection, where precise and repeatable measurements are essential. The high precision of the laser interferometer stage ensures accurate alignment of acquired images, facilitating the generation of precise 3D volume reconstructions (Figs. 3 and 6). Additionally, the system supports navigation on KLARF files, enabling the analysis of defects detected by inspection tools. This capability allows for seamless correlation of defect data with SIMS imaging and chemical analysis, enhancing defect characterization and process optimization (Fig. 7). APPLICATIONS IN MICROELECTRONICS These results demonstrate the system’s effectiveness in analyzing microelectronics samples. The detailed 2D and 3D imaging capabilities allow for the identification and analysis of structural and elemental features at nanoscale resolution. This level of detail is critical for advancing the understanding of material properties and improving the design and manufacture of microelectronic devices. (a) Fig. 4 (a) SE image of a CIGS solar cell and (b) corresponding SIMS spectrum. Fig. 5 (a) 85Rb and (b) 115In distribution in the CIGS solar cell. (c) 2D map of the 85Rb+87Rb and 113In+115In isotopes superimposed on the SE signal. The Rb is confined in the grain boundaries only, (FOV 20 µm). (b) (c) (a) (b)
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