edfas.org 47 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 27 NO. 1 LITERATURE REVIEW The current column comprises peer-reviewed articles published since 2021 on reliability, 3D, package, sample prep, system level, AI, quantum computing, security, reverse engineering, processing, and novel materials. Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the email address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer Reviewed Literature of Interest to Failure Analysis: Cornucopia of reliability, 3D, package, sample prep, system level, AI, quantum computing, security, reverse engineering, processing, and novel materials Michael R. Bruce, Consultant mike.bruce@earthlink.net • G. Aguirre, J. Gamez, and V. Champac: “Aggravated NBTI Reliability due to Hard-to-Detect Open Defects,” Microelectronics Reliability, 2024, 160, p. 115480. • G. Burkard, T.D. Ladd, A. Pan, et al.: “[Review:] Semiconductor Spin Qubits,” Rev. Mod. Phys., 2023, 95, p. 025003. • K. Chen, Y. Zhang, G. Cheng, et al.: “A Machine Learning and Finite Element Simulationbased Void Inspection for Higher Solder Joint Reliability,” Microelectronics Reliability, 2024, 154, p. 115323. • A. Firiti, M. Samnani, A. Bhattacherjee, et al.: “3D Process Simulation-assisted Device Failure Analysis with Virtual Defect Injection in IC Layout,” Microelectronics Reliability, 2023, 150, p. 115121. • T. Futaya, R. Mizokuchi, M. Taguchi, et al.: “Cryogenic Flip-chip Interconnection for Silicon Qubit Devices,” Jpn. J. Appl. Phys., 2024, 63, p. 03SP64. • P. Hoveida, A. Phoulady, H. Choi, et al.: “Automated Endpointing in Microelectronics Failure Analysis using Laser Induced Breakdown Spectroscopy,” Microelectronics Reliability, 2023, 150, p. 115224. • F. Irrera and G. Broccoli: “A Comprehensive Study of Negative Bias Temperature Instability in MOS Structures,” Microelectronics Reliability, 2024, 155, p. 115371. • T. Lee, H. Yang, and I. Dutta: “Damage Mechanisms in Through-Silicon Vias due to Thermal Exposure and Electromigration,” J. Electron. Mater., 2024, 53, p. 1214. • M. Mayes, F. Farahmand, M. Grossnickle, et al.: “Mapping the Intrinsic Photocurrent Streamlines through Micromagnetic Heterostructure [Quantum] Devices [using Photocurrent Streamline Microscopy],” Applied Physical Sciences, 2023, 120, p. e2221815120. • A. Özyildirim: “Methods of Coping with Fractured FPGA Leads during Space Qualification,” Microelectronics Reliability, 2024, 154, p. 115341. • A. Phoulady, Y. Suleiman, H. Choi, et al.: “Synthetic Data Augmentation to Enhance Manual and Automated Defect Detection in Microelectronics,” Microelectronics Reliability, 2023, 150, p. 115220. • M.H. Rahman, P. Gollapalli, P. Manganaris, et al.: “Accelerating Defect Predictions in Semiconductors using Graph Neural Networks,” APL Mach. Learn., 2024, 2, p. 016122. • R.M. Stein, Z.S. Barcikowski, S.J. Pookpanratana, et al.: “Alternatives to Aluminum Gates for Silicon Quantum Devices: Defects and Strain,” J. Appl. Phys., 2021, 130, p. 115102. • G. Sun and S. Zhang: “A Review on Warpage Measurement Metrologies for Advanced Electronic Packaging,” Microelectronics Reliability, 2024, 160, p. 115456. • F. Wang, Z. Yue, J. Liu, et al.: “Quantitative Imaging of Printed Circuit Board (PCB) Delamination Defects using Laser-induced Ultrasound Scanning Imaging,” J. Appl. Phys., 2022, 131, p. 053101.
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