edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 27 NO. 1 16 CONCLUSIONS The evolution of the characteristic relaxation time constant of the GR noise as a function of the polarization at fixed temperature and fixed drain current and applied gate to source polarization as a function of temperature allow evaluation of the presence of traps located in the depleted region of the devices. It is observed that the number of traps for which the nature cannot be confirmed for the investigated sub 16 nm technologies is low. Moving toward more scaled device dimensions, i.e., from UTBOXs to FinFETs and from FinFETs to GAA transistors the number of identified trap decreases, suggesting that the fabrication process gained maturity. The study of the GR noise was also successfully employed to identify traps created by proton irradiation of passive components, as in in-situ phosphorus doped polycrystalline silicon serpentine resistances. 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