edfas.org 1 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 27 NO. 1 ABOUT THE COVER The image shows a transistor with the bond wires nearly fusing during failure simulation. The failure simulation was performed to approximate the electrical overstress (over current) event the original failed transistor experienced. Photo by Ryan Winkler, Hi-Rel Laboratories Inc., First Place Winner in Color Images, 2024 EDFAS Photo Contest. A RESOURCE FOR TECHNICAL INFORMATION AND INDUSTRY DEVELOPMENTS FEBRUARY 2025 | VOLUME 27 | ISSUE 1 edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS DEPARTMENTS Low Frequency Noise Spectroscopy: A Powerful Diagnostic Tool for Trap Identification in Active and Passive Components B. Cretu, A. Tahiat, R. Coq Germanicus, F. Bezerra, C. Bunel, A. Veloso, and E. Simoen This article describes and shows application of low frequency noise spectroscopy to identify stable traps induced by proton irradiations on silicon passive devices. Author Guidelines Author guidelines and a sample article are available at edfas. org. Potential authors should consult the guidelines for useful information prior to manuscript preparation. 3 8 2 GUEST EDITORIAL E. Jan Vardaman 32 WEFA 2024 ISTFA SESSION WRAP 33 ISTFA PANEL & USER GROUP SUMMARY 40 2024 EDFAS AWARD WINNERS 41 2025 EDFAS AWARDS 42 CALL FOR NOMINATIONS Felix Beaudoin 43 BOARD OF DIRECTORS NEWS Chris Richardson 44 FIB SEM SUMMARY Michael DiBattista 45 DIRECTORY OF FA LABS Rosalinda Ring 46 EDUCATION NEWS Navid Asadi 47 LITERATURE REVIEW Michael R. Bruce 48 PRODUCT NEWS Ted Kolasa 50 TRAINING CALENDAR Rosalinda Ring 52 ADVERTISERS INDEX Quantum Diamond Microscopy for Semiconductor Failure Analysis Marwa Garsi, Andreas Welscher, Manuel Schrimpf, Bartu Bisgin, Michael Hanke, Horst Gieser, Daniela Zahn, and Fleming Bruckmaier Quantum diamond microscopy is presented as a nondestructive, innovative tool, and case studies compare it with existing electrical failure analysis techniques. 18 For the digital edition, log in to edfas.org, click on the “News & Magazines” tab, and select “EDFA Magazine.” Full Chip Backside Delayering of 10 nm Node Integrated Circuits with Chemically Assisted Focused Ion Beam Deprocessing Michael DiBattista, Robert Chivas, Ata Tafazoli Yazdi, Jonathan Sheeder, and Scott Silverman The work featured in this article takes advantage of chemically assisted focused ion beam processing with ultraviolet spectroscopy to destructively delayer starting from the shallow trench isolation layer, enabling highresolution SEM imaging at each layer. 8 3 ISTFA 2024 Highlights A recap of the ISTFA 2024 event includes General Chair Yan Li’s wrap-up as well as a list of the winning ISTFA papers and posters. 28 28 18
RkJQdWJsaXNoZXIy MTYyMzk3NQ==