edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 26 NO. 4 34 For failure analysis, defects located with lower resolution techniques (such as SEM EBIC) can be extracted for STEM EBIC imaging, and biasing can be performed on the cross section both to determine electronic characteristics of the isolated defects, and to further stress the defect to observe its evolution into, for example, physical damage. More broadly, observation of nanoscale electronic features in devices can bolster our understanding of device function and failure, providing more rational paths for improving modern components[9] and for developing future technologies.[14,15] ACKNOWLEDGMENTS This material is based upon work supported by the Defense Microelectronic Activity under Contract No. HQ072721C0002. REFERENCES 1. W.A. Hubbard: “STEM EBIC: Toward Predictive Failure Analysis at High Resolution,” EDFA, 2020, 22(4), p. 4-8, doi.org/10.31399/asm. edfa.2020-4.p004. 2. W.A. Hubbard: “Making Connections: Challenges and Opportunities for In Situ TEM Biasing,” EDFA, 2023, 25(1), p. 4-8, doi.org/10.31399/ asm.edfa.2023-1.p004. 3. T.E. Everhart, O.C. Wells, and R.K. Matta: “A Novel Method of Semiconductor Device Measurements,” Proc. IEEE, 1964, 52(12), p. 16421647, doi.org/10.1109/PROC.1964.3460. 4. C.A. Smith, et al.: “Resistive Contrast Imaging: A New SEM Mode for Failure Analysis,” IEEE Trans. Electron Devices, 1986, 33(2), p. 282-285, doi.org/10.1109/T-ED.1986.22479. 5. H. Choi, et al.: “High Resolution Short Defect Localization in Advanced FinFET Device using EBAC and EBIRCh,” IPFA Proc., 2017, p. 1-4, doi. org/10.1109/IPFA.2017.8060090. 6. G. Moldovan and W. Courbat: “Strategies to Identify Physical Origin of Contrast in EBIRCH,” Proc. Int. Symp. Test. Fail. Anal. (ISTFA), 2022, p. 277-283, doi.org/10.31399/asm.cp.istfa2022p0277. 7. T.G. Sparrow and U. Valdrèg: “Application of Scanning Transmission Electron Microscopy to Semiconductor Devices,” Philos. Mag., 1977, 36(6), p. 1517-1528, doi.org/10.1080/14786437708238532. 8. W.A. Hubbard, et al.: “STEM Imaging with Beam-Induced Hole and Secondary Electron Currents,” Phys. Rev. Appl., 2018, 10(4), doi.org/ 10.1103/PhysRevApplied.10.044066. 9. W.A. Hubbard, et al.: “Scanning Transmission Electron Microscope Mapping of Electronic Transport in Polycrystalline BaTiO3 Ceramic Capacitors,” Appl. Phys. Lett., 2019, 115(13), p. 133502, doi.org/ 10.1063/1.5117055. 10. M. Mecklenburg, et al.: “Electron Beam-induced Current Imaging with Two-angstrom Resolution,” Ultramicroscopy, 2019, 207, p. 112852, doi.org/10.1016/j.ultramic.2019.112852. 11. O. Dyck, et al., “Direct Imaging of Electron Density with a Scanning Transmission Electron Microscope,” Nat. Commun., 2023, 14(1), doi. org/10.1038/s41467-023-42256-9. 12. W. Hubbard, M. Mecklenburg, and B.C. Regan: “STEM EBIC Thermometry Calibration with PEET on Al Nanoparticles,” Microsc. Microanal., 2020, 26(S2), p. 3124-3125, doi.org/10.1017/ S1431927620023880. 13. E. Vlasov, et al.: “Secondary Electron Induced Current in Scanning Transmission Electron Microscopy: An Alternative Way to Visualize the Morphology of Nanoparticles,” ACS Mater. Lett., 2023, 5(7), p. 1916-1921, doi.org/10.1021/acsmaterialslett.3c00323. 14. W.A. Hubbard, et al.: “Imaging Dielectric Breakdown in Valence Change Memory,” Adv. Funct. Mater., 2022, 32(2), p. 2102313, doi.org/ 10.1002/adfm.202102313. 15. O. Recalde-Benitez, et al., “Operando Two-terminal Devices Inside a Transmission Electron Microscope,” Commun. Eng., 2023, 2(1), doi. org/10.1038/s44172-023-00133-9. 16. O. Recalde-Benitez, et al., “Weld-free Mounting of Lamellae for Electrical Biasing Operando TEM,” Ultramicroscopy, 2024, p. 113939, doi.org/10.1016/j.ultramic.2024.113939. 17. W.A. Hubbard: “Mapping Conductivity and Electric Field in an AlGaAs HEMT with STEM EBIC,” Proc. Int. Symp. Test. Fail. Anal. (ISTFA), 2023, p. 384-386, doi.org/10.31399/asm.cp.istfa2023p0384. ABOUT THE AUTHOR William A. Hubbard received a B.S. in physics and mathematics from Boston University in 2008, after which he worked as a research assistant in the Harvard University Physics Department until 2010. He received his Ph.D. in experimental condensed matter physics in 2017 from UCLA, where he was also a postdoctoral scholar until 2019. He is currently the CEO of NanoElectronic Imaging Inc., where his research focuses on developing electron-microscopy based techniques, such as STEM EBIC, which can visualize electronic and thermal contrast in operating nanodevices.
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