edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 26 NO. 2 46 LITERATURE REVIEW The current column comprises peer-reviewed articles published since 2022 on case studies, FA process, yield, system/ board level, test, packaging, discretes, power, and wide band electronics (e.g., SiC and GaN). Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the email address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: Cornucopia of power, wide band, package, system, process, yield, test, and case studies Michael R. Bruce, Consultant mike.bruce@earthlink.net • M. Khajehvand, H. Seppänen, and P. Sepehrband: “Bond-pad Damage in Ultrasonic Wedge Bonding,” Micron. Reliab., 2024, 152, p. 115279. • P. Roumanille, J. Lesseur, J. Uzanu, et al.: “Using X-ray Imaging for the Study of Crack Development in Solder Reliability Testing,” Micron. Reliab., 2023, 150, p. 115079. • M. Stabentheiner, P. Diehle, S. Hübner, et al.: “On the Insignificance of Dislocations in Reverse Bias Degradation of Lateral GaN-on-Si Devices,” J. Appl. Phys., 2024; 135, p. 025703. • M. Vivona, P. Fiorenza, V. Scuderi, et al.: “Space Charge Limited Current in 4H-SiC Schottky Diodes in the Presence of Stacking Faults,” Appl. Phys. Letters, 2023, 123, p. 072101. • T. Walter, G. Khatibi, A. Betzwar Kotas, et al.: “In-situ Delamination Detection in Multi-layered Semiconductor Packages,” Micron. Reliab., 2023, 150, p. 115098. • L. Wang, C.-C. Chai, F.-X. Li, et al.: “Influence of Gate Voltage Dependent Piezoelectric Polarization on Damage Effect of GaN HEMT Induced by High Power Electromagnetic Pulse,” Micron. Reliab., 2022, 136, p. 114665. • L. Wang, Y. Jia, X. Zhou, et al.: “Heavy-ion Induced Gate Damage and Thermal Destruction in Doubletrench SiC MOSFETs,” Micron. Reliab., 2022, 137, p. 114770. • Y. Wang, Q. Zhu, and C. Huang: “Failure Analysis of Short-circuit Failure of Metal-oxide-metal Capacitor,” Micron. Reliab., 2022, 137, p. 114691. • J.L. Weyher, A. Tiberj, G. Nowak, et al.: “Extended Defects in SiC: Selective Etching and Raman Study,” J. Electron. Mater., 2023, 52, p. 5039. • N. Wu, Z. Xing, S. Li, et al.: “Topical Review: GaNbased Power High-electron-mobility Transistors on Si Substrates: From Materials to Devices,” Semicond. Sci. Technol., 2023, 38, p. 063002. • P. Xue, A.S. Bahman, F. Iannuzzo, et al.: “Prediction of the Electrochemical Migration Induced Failure on Power PCBs under Humidity Condition — A Case Study,” Micron. Reliab., 2022, 139, p. 114796. • T. Yamaguchi, Y. Suto, N. Araki, et al.: “Investigation of Failure Mechanism of Aluminum-scandium Wire Bond Contact under Active Power Cycle Test,” Micron. Reliab., 2023, 144, p. 114956. • W.X. Yang, Y. Zhang, J. Qiu, et al.: “Research on Intermittent Fault of Bond Wire under Thermal and Vibration Shock Based on Simulation and Experiments,” Micron. Reliab., 2023, 150, p. 115214. • Y. Yang, M.K. Toure, P.M. Souare, et al.: “Study of Underfill Corner Cracks by the Confocal-DIC and Phantom-nodes Methods,” Micron. Reliability, 2022, 128, p. 114431. • R. Zhang and Y. Zhang: “Progress Review: Power Device Breakdown Mechanism and Characterization: Review and Perspective,” Jpn. J. Appl. Phys., 2023, 62, p. SC0806. • Y.-L. Zhang, J. Zhang, H.-P. Ma, et al.: “Failure Mechanism of 4H-SiC Junction Barrier Schottky Diodes under Harsh Thermal Cycling Stress,” Micron. Reliab., 2022, 136, p. 114630.
RkJQdWJsaXNoZXIy MTYyMzk3NQ==