edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 26 NO. 2 42 The EDFAS Education Subcommittee strives for the development and delivery of educational products to the EDFAS membership. Keeping with its strategic focus on reaching a broader audience, including facilitating Q&A and educational exchanges on the ASM Connect platform, the Subcommittee has been inviting ISTFA tutorial speakers and others to present short format presentations on selected FA topics. These presentations are now available on ASM Connect in the EDFAS online community. Use the following link: http://bit.ly/3Ivu8yS. An ASM Connect login is required. For this issue, we are highlighting a tutorial by Radek Dao, Libor Strakoš, Ondřej Novotný, Vojtěch Schánilec, Veronika Hegrová, Tomáš Vystavěl, Umberto Celano, and Jan Neuman on in-situ correlative AFM-SEM characterization for failure analysis. Correlative in-situ microscopy, an approach for characterizing complex physical and electrical properties of semiconductor materials, uses a combina- tion of different imaging systems to provide a comprehensive understanding of properties like dopant concentration levels, carrier types, and crystalline defect densities. These properties are fundamental factors that influence the electrical performance of semiconductor devices. EDUCATION NEWS Bhanu P. Sood bp.sood@gmail.com SPOTLIGHT ON TUTORIALS In this tutorial, the authors demonstrate how using an atomic force microscopy (AFM) module integrated inside the scanning electron microscopy (SEM)-based or focused ion beam (FIB)/SEM makes it possible to analyze dopant concentration on cross-sections of high-power MOSFET transistors. Measurement workflow highlighted in the tutorial includes sample preparation, AFM navigation to the region of interest, to the site-specific measurement of the local resistivity (dopant concentration). Additionally, AFM-in-SEM can be used for a broad range of analyses, such as measuring high-resolution topography and various electrical properties using techniques such as conductive-AFM (C-AFM), scanning spreading resistance microscopy (SSRM) and Kelvin probe force microscopy (KPFM). C-AFM enables electrical conductivity measurement with nanoscale resolution, while SSRM can provide valuable information on dopant concentration profiles in semiconductors. KPFM is a nondestructive technique that measures surface potential, giving insight into electronic properties. For additional information on the EDFAS Education Subcommittee, contact Sue Sellers at sue.sellers@asminternational.org. Fig. 1 In-situ correlative AFM-SEM characterization for failure analysis. Fig. 3 SiC MOSFET high power transistor in situ dopant concentration analysis. Fig. 2 AFM tip navigation and approach.
RkJQdWJsaXNoZXIy MTYyMzk3NQ==