edfas.org 17 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 26 NO. 2 material system, Pt versus SiC, and the material form, film versus bulk, are both different. DiBattista et al. reported that the resistivity of the film with morphology in Fig. 6a is 7665 µΩ·cm and in Fig. 6d 666 µΩ·cm. In addition to morphology, the element distribution in the microstructure can also influence the electrical resistivity. In general, the C map, for example, curve f in Fig. 6g, correlates better with the corresponding microstructural morphology, for example, curve d, compared to the Pt map. However, the Pt map, for example, curve b, appears to overlap with the corresponding morphology, for example, curve a, only on smaller scales with J = 1 and J = 2, then deviates as J increases, and finally the discrepancy decreases on larger scales with J = 7 and J = 8. Curve e appears to correlate better with its corresponding morphology, that is, curve d, on larger scales from J = 5 to J = 8. More work is currently being carried out to identify the principal components of µSHD and establish their quantitative relationships with the properties of the material. SUMMARY This article proposes µSHD as a systematic and quantitative approach to spectra and image data in the field of MFA. The advantages of this approach lie in that it originates from the understanding of the mathematics behind AI and thus eliminates the large computation cost from DCNNs. Note that the focus of this article is only on understanding and benchmarking the role that µSHD plays in different MFA applications. Concrete routes for employing µSHD directly as the quantitative descriptor for supervised and unsupervised machine learning have been discussed. Manufacturers of MFA equipment can certainly utilize the µSHD tool to automate and improve their characterization techniques and image processing and analysis protocols. Moreover, the concept of structural hierarchy behind µSHD can help to gain deeper insights from the data from the perspective of systems. energy level lower than where it starts. In contrast, curve d, which represents the structure of the other Pt film shown in Fig. 6d, also increases its energy from J = 1 to J = 5, but the energy oscillates and remains at a high level on larger scales. A previous study on the microstructure of sintered bulk silicon carbide (SiC) ceramics, found that a rapid drop from smaller to larger scales on the µSHD curve is a characteristic of high electrical resistivity and a reverse trend, showing a gradual increase from smaller to larger scales and maintaining larger µSHDs at larger scales, characterizing low resistivity.[2] This qualitatively reconfirms this conclusion, although the Fig. 6 TEM and EDS maps of two FIB-deposited platinum films with different resistivity. TEM morphology (a) and (d), EDS Pt map (b) and (e), and EDS C map (c) and (f). The images are adapted from DiBattista et al.[20] (g) The µSHD curves of the images. (a) (b) (c) (g) (d) (e) (f)
RkJQdWJsaXNoZXIy MTYyMzk3NQ==