edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 26 NO. 1 6 therefore, small fluctuations in atomic correlations due to local order are not lost due to spatial averaging.[22] When implemented as a 4D-STEM technique, variations of the PDF can be tracked as a function of position. This has been done in metallic glasses,[23,24] semiconductor polymer blends,[25] and metal-organic framework (MOF) Fig. 1 Panel I: Correlated 4D-STEM and EDX analysis of Ge-Sb-Te phase-change memory material. Results from RESET-Pass (a-d) and RESET-Fail (e-h) cells are shown. Diffraction correlation index maps (a,e) and phase maps (b,f) from the TiN, Ge, and Ge2Sb2Te5 phases. Also shown are the EDX spectral abundance maps for the Ge2Sb2Te5 (c,g) and Ge (d,h) extracted via vertex component analysis. Reproduced with permission from Ref 13. Panel II: Structural phase map of a single tellurium nanowire (a) where each color represents one of the real space regions (b) with a common diffraction pattern signature. Also shown are the average diffraction pattern for each class (c) and the class patterns with disc intensity weights overlaid in red (d). Reproduced with permission from Ref 15. (a) (e) (b) (f) (c) (g) (d) (h) (a) (b) (c) (d) I. II.
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