edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 26 NO. 1 52 LITERATURE REVIEW The current column comprises peer-reviewed articles published since 2021 on case studies, FA process, yield, system/ board level, test, packaging, discretes, power, and wide band electronics (e.g., SiC and GaN). Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the e-mail address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: Cornucopia of power, wide band, package, system, process, yield, test, and case studies Michael R. Bruce, Consultant mike.bruce@earthlink.net • P. Foster, J. Huang, A. Serb, et al.: “An FPGA-based System for Generalised Electron Devices Testing,” Sci Rep, 2022, 12, p. 13912. • Y. Kim, D. Cho, and J.-H. Lee: “Wafer Defect Pattern Classification with Detecting Out-of-distribution [Data],” Micron. Reliab., 2021, 122, p. 114157. • G. Kusch, M. Frentrup, N. Hu, et al.: “Defect Characterization of {101 _ 3} GaN by Electron Microscopy,” J. Appl. Phys., 2022, 131, p. 035705. • C.T.-K. Lew, V.K. Sewani, T. Ohshima, et al.: “Charge Pumping Electrically Detected Magnetic Resonance of Silicon Carbide Power Transistors,” J. Appl. Phys., 2023, 134, p. 055703. • Y. Li, H. Xu, H. Zhao, et al.: “Vulcanization Failure Mechanism Analysis of Lead-frame LED Package,” Micron. Reliab., 2023, 148, p. 115183. • P.T. Ng, F. Rivai, A.C.T. Quah, et al.: “Localization of NVM Inter-Poly Defects using Nanoprobing Techniques,” Micron. Reliab., 2021, 120, p. 114095. • J. Oliveira, P. Frey, H. Morel, et al.: “Failure Degradation Similarities on Power SiC MOSFET Devices Submitted to Short-circuit Stress and Accelerated Switching Conditions,” Micron. Reliab., 2023, 148, p. 115166. • C. Ota, J. Nishio, A. Okada, et al.: “Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and its Expansion Process, J. Electron. Mater., 2023, 52, p. 5109. • Y. Qin, Z. Wang, K. Sasaki, et al.: “[Review:] Recent Progress of Ga2O3 Power Technology: Large-area Devices, Packaging and Applications,” Jpn. J. Appl. Phys., 2023, 62, p. SF0801. • Y. Sha, Z. He, H. Gutierrez, et al.: “Small Sample Classification [using SAM] Based on Data Enhancement and its Application in Flip Chip Defection [sic],” Micron. Reliab., 2023, 141, p. 114887. • S.P. Shangguan, J.W. Han, Y.Q. Ma, et al.: “Displacement Damage and Single Event Effects of SiC Diodes and MOSFETs by Neutron, Heavy Ions and Pulsed Laser,” Micron. Reliab., 2022, 139, p. 114791. • Y. Tai, P. Chen, Y. Jian, et al.: “Failure Mechanism and Life Estimate of Metallized Film Capacitor under High Temperature and Humidity,” Micron. Reliab., 2022, 137, p. 114755. • W. Tan, L. Zhao, C. Lu, et al.: “An In-depth Investigation of Gate Leakage Current Degradation Mechanisms in 1.2 kV 4H-SiC Power MOSFETs,” Micron. Reliab., 2023, 142, p. 114907. • M.H. Thor, B.L. Yeoh, S.H. Goh, et al.: “Dynamic EFI and Circuit Analysis Case Studies on Integrated Circuit Buried via Void Defects,” Micron. Reliab., 2022, 135, p. 114569. • Y. Tian, R. Li, J. Li, et al.: “Effects of Electric Polarization and Defect Energy Levels Induced by Ion Irradiation on the Electrical Behavior of 4H-SiC Schottky Barrier Diodes,” J. Phys. D: Appl. Phys., 2023, 56, p. 355110. • M. Vivona, P. Fiorenza, V. Scuderi, et al.: “Space Charge Limited Current in 4H-SiC Schottky Diodes in the Presence of Stacking Faults,” Appl. Phys. Letters, 2023, 123, p. 072101.
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