edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 26 NO. 1 38 With extensive experience, he has been instrumental in elevating failure analysis to an industrial level. He talked about SiC and Group-III nitrides and the associated FA challenges. Our fourth and final panelist, Nicholas Richardson, the manager of Failure Analysis Engineering at Wolfspeed, shared his years of experience in the compound semiconductor industry, particularly in the manufacturing and failure analysis of SiC power devices. In his presentation, he gave an overview of reliability failure mechanisms and failure analysis techniques for SiC power electronic conversion devices. As the Q&A session commenced, attendees were actively engaged, posing questions, and sharing insightful thoughts. Among the various discussions, below are a few highlights: Dislocations in GaN and SiC Power Device Manufacturing: A central theme addressed the formidable task of minimizing defect density, particularly dislocation densities, in GaN and SiC power device manufacturing. In contrast to silicon-based wafers, where a single dislocation could jeopardize the entire chip, GaN and SiC substrates contain a high order of magnitude of dislocations that prove challenging to reduce. The current approach involves maintaining a relatively low density and allowing devices to function with them. Audience questions delved into the realm of creative engineering solutions, exploring possibilities like using thermal annealing to reduce crystal defects, trapping dislocations in non-critical areas, or even harnessing their unique properties for good use. Substrate Switching Dilemma for High-Power GaN Devices: Another compelling discussion revolved around the transition from silicon to SiC substrates for high-power GaN devices. While there’s a recognized technical need for more reliable SiC substrates, the current roadblock is the significantly higher manufacturing costs, rendering it an impractical solution. Differing perspectives emerged among panelists, with some proposing that economies of scale could resolve the cost challenge, while others argued that the current high cost is largely tied to the more complicated manufacturing process, and hence will remain prohibitive. The Relationship Between Electronic Device Reliability and Substrate Bandgap: There was also an interesting discussion specifically comparing SiC, GaN, and Si devices. The consensus was that reliability is more closely tied to dislocation defects than the substrate bandgap, particularly in GaN and SiC substrates, due to a high density of defects. Another query delved into the impact of charge trapping, with two identified types: in the gate oxide and at the gate-substrate interface. The consensus was that both types significantly influence reliability. A key point emerged regarding how defects affect device performance and reliability. It was emphasized that achieving high performance and reliability requires prediction before production and screening after production. These discussions shed light on the intricate landscape of power device reliability and failure analysis, offering valuable insights and prompting further exploration into innovative strategies for more reliable power electronics. “GaN AND SiC SUBSTRATES CONTAIN A HIGH ORDER OF MAGNITUDE OF DISLOCATIONS THAT PROVE CHALLENGING TO ELIMINATE.” ISTFA 2023 USER GROUP HIGHLIGHTS Daminda Dahanayaka,* Joy Liao,** and Anita Madan,*** ISTFA 2023 User Group Chair/Co-Chairs *IBM, Albany, N.Y. — daminda@ibm.com **Nvidia, Santa Clara, Calif. — jliao@nvidia.com ***Independent Consultant, New York, N.Y. — amadan16@gmail.com During the ISTFA 2023 conference held at the convention center in Phoenix, a series of six engaging in-person User Group sessions took place. A new addition this year was the Artificial Intelligence in Failure Analysis User Group. These sessions were meticulously designed to foster active participation, facilitate meaningful interaction, encourage networking, and establish enduring channels for discussing crucial industry matters beyond the event. Each group featured several captivating mini-talks intended to spark discussions on specific
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