edfas.org 13 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 26 NO. 1 49. M. Nord, et al.: “Strain Anisotropy and Magnetic Domains in Embedded Nanomagnets,” Small, 2019, 15(52), p. 1904738. 50. G. Nordahl and M. Nord: “Improving Magnetic STEM-Differential Phase Contrast Imaging using Precession,” Microscopy and Microanalysis, 2023, 29(2), p. 574-579. 51. T.P. Almeida, et al.: “Direct Visualization of the Magnetostructural Phase Transition in Nanoscale FeRh Thin Films Using Differential Phase Contrast Imaging,” Physical Review Materials, 2020, 4(3), p. 034410. 52. V. Boureau, et al.: “High-Sensitivity Mapping of Magnetic Induction Fields with Nanometer-Scale Resolution: Comparison of Off-Axis Electron Holography and Pixelated Differential Phase Contrast,” Journal of Physics D: Applied Physics, 2021, 54(8), p. 085001. 53. K.X. Nguyen, et al.: “Disentangling Magnetic and Grain Contrast in Polycrystalline FeGe Thin Films using Four-Dimensional Lorentz Scanning Transmission Electron Microscopy,” Physical Review Applied, 2022, 17(3), p. 034066. 54. B. Wang, et al.: “Extracting Weak Magnetic Contrast from Complex Background Contrast in Plan-View FeGe Thin Films,” Ultramicroscopy, 2022, 232, p. 113395. 55. K.X. Nguyen, et al.: “Angstrom-Scale Imaging of Magnetization in Antiferromagnetic Fe2As Via 4D-STEM,” Ultramicroscopy, 2023, 247, p. 113696. 56. L. Bruas, et al.: “Improved Measurement of Electric Fields by Nanobeam Precession Electron Diffraction,” Journal of Applied Physics, 2020, 127(20). 57. B.C. da Silva et al.: “Assessment of Active Dopants and P–N Junction Abruptness Using in Situ Biased 4D-STEM,” Nano Letters, 2022, 22(23), p. 9544-9550. 58. A. Beyer, et al.: “Quantitative Characterization of Nanometer-Scale Electric Fields Via Momentum-Resolved STEM,” Nano Letters, 2021, 21(5), p. 2018-2025. 59. K. Müller-Caspary, et al.: “Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission ABOUT THE AUTHORS Aaron C. Johnston-Peck is a materials research engineer at the National Institute of Standards and Technology where he characterizes materials using various electron microscopy techniques. Prior to NIST, he worked as a postdoctoral fellow at Brookhaven National Laboratory and received his Ph.D. in materials science and engineering from North Carolina State University. He has contributed to 50 peer reviewed publications. Andrew A. Herzing is a materials research engineer at the National Institute of Standards and Technology where he develops materials characterization techniques with a particular interest in tomography and 4D-STEM. He received his Ph.D. in materials science and engineering from Lehigh University in 2007 and is currently serving as the president-elect of the Microanalysis Society. Electron Microscopy,” Physical Review Letters, 2019, 122(10), p. 106102. 60. T. Seki, Y. Ikuhara, and N. Shibata: “Toward Quantitative Electromagnetic Field Imaging by Differential-Phase-Contrast Scanning Transmission Electron Microscopy,” Microscopy, 2020, 70(1), p. 148-160. 61. K. Müller, et al.: “Atomic Electric Fields Revealed by a Quantum Mechanical Approach to Electron Picodiffraction,” Nature Communications, 2014, 5(1), p. 5653. 62. K. Müller-Caspary et al.: “Measurement of Atomic Electric Fields and Charge Densities from Average Momentum Transfers using Scanning Transmission Electron Microscopy,” Ultramicroscopy, 2017, 178, p. 62-80. 63. M.C. Cao, et al.: “Theory and Practice of Electron Diffraction from Single Atoms and Extended Objects using an EMPAD,” Microscopy, 2018, 67(suppl_1), p. i150-i161. 64. L. Clark, et al.: “Probing the Limits of the Rigid-Intensity-Shift Model in Differential-Phase-Contrast Scanning Transmission Electron Microscopy,” Physical Review A, 2018, 97(4), p. 043843. 65. I. MacLaren, et al: “On the Origin of Differential Phase Contrast at a Locally Charged and Globally Charge-Compensated Domain Boundary in a Polar-Ordered Material,” Ultramicroscopy, 2015, 154, p. 57-63. 66. T. Mawson, et al.: “Suppressing Dynamical Diffraction Artefacts in Differential Phase Contrast Scanning Transmission Electron Microscopy of Long-Range Electromagnetic Fields Via Precession,” Ultramicroscopy, 2020, 219, p. 113097. 67. S. Toyama, et al.: “Quantitative Electric Field Mapping in Semiconductor Heterostructures via Tilt-Scan Averaged DPC STEM,” Ultramicroscopy, 2022, 238, p. 113538. 68. B. Haas, et al.: “Direct Comparison of Off-Axis Holography and Differential Phase Contrast for the Mapping of Electric Fields in Semiconductors by Transmission Electron Microscopy,” Ultramicroscopy, 2019, 198, p. 58-72. Advertise in Electronic Device Failure Analysis magazine! For information about advertising in Electronic Device Failure Analysis: Mark Levis, Business Development Manager 440.671.3834, mark.levis@asminternational.org Current rate card may be viewed online at asminternational.org/mediakit.
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