edfas.org 55 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 25 NO. 4 profiles are calculated and plotted using the differential measurements taken by repeating the above two steps. For more information, visit alpinc.net. 600 V DISCRETE INSULATOR GATE BIPOLAR TRANSISTORS Nexperia launches its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600 V devices, starting with the 30 A NGW30T60M3DF. These devices enable higher power density in power conversion and motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters, uninterruptible power supplies, photovoltaic strings, electric vehicle charging, and induction heating and welding. Nexperia’s 600 V IGBTs feature a robust, cost-effective carrier-stored trench-gate advanced field-stop construction, providing exceptionally low conduction and switching loss performance with high levels of ruggedness in operating temperatures up to 175°C. This improves the efficiency and reliability of power inverters, induction heaters, welding equipment, and industrial applications like motor drives and servos, robotics, elevators, and operating grippers. Designers can choose between the medium speed (M3) and high speed (H3) series IGBTs. These IGBTs have been designed with very tight parameter distributions, allowing multiple devices to connect safely in parallel. In addition, lower thermal resistance than competing devices enables Nexperia’s 600 V IGBTs are ideal for power conversion and motor drive applications.
RkJQdWJsaXNoZXIy MTMyMzg5NA==