edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 25 NO. 4 52 LITERATURE REVIEW The current column comprises peer-reviewed articles published since 2021 on case studies, FA process, yield, system/ board level, test, packaging, discretes, power, and wide band electronics (e.g., SiC and GaN). Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the e-mail address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: Cornucopia of power, wide band, package, system, process, yield, test, and case studies Michael R. Bruce, Consultant mike.bruce@earthlink.net • L. Ammoura, et al.: “Analysis of Resistive Defects on a Foundry 8T SRAM-based IMC Architecture,” Micron. Reliab., 2023, 147, p. 115029. • M.E. Bathen, et al.: “Characterization Methods for Defects and Devices in Silicon Carbide,” J. Appl. Phys., 2022, 131, p. 140903. • E. Brezza, et al.: “Heterojunction Bipolar Transistor Featuring a Stressed Implanted Collector: Defects Formation and Impact on Functionality,” Micron. Reliab., 2022, 139, p. 114847. • X. Cai, et al.: “[Review:] Recent Progress of Physical Failure Analysis of GaN HEMTs,” J. Semicond., 2021, 42, p. 051801. • K. Cedergren: “The Nature of Resistance,” Nat. Phys., 2022, 18, p. 1130. • J. Chen, et al.: “The Failure Mechanism of CommonMode Chip Inductors,” J. Electron. Mater., 2023, 52, p. 5297. • S. Chen and J. Liu: “Progress Review: Liquid Metal Printed Electronics Towards Ubiquitous Electrical Engineering,” Jpn. J. Appl. Phys., 2022, 61, p. SE0801. • F. Hadian, et al.: “The Failure of Sn-Bi-Based Solder Joints Due to Current Stressing,” J. Electron. Mater., 2023, 52, p. 751. • P. Jagtap, et al.: “Sn Whisker Growth During Mechanical Loading and Unloading: Highlighting the Critical Role of Stress in Whisker Growth,” J. Electron. Mater., 2023, 52, p. 773. • T.-H. Kim, et al.: “Electronic Structure of Epitaxially Grown and Regrown GaN pn Junctions Characterized by Scanning Kelvin Probe and Capacitance Microscopy,” J. Appl. Phys., 2022, 131, p. 015704. • E. Kodolitsch, et al.: “Structural Investigation of Triangular Defects in 4H-SiC Epitaxial Layers as Nucleation Source for Bar Shaped Stacking Faults (BSSFs),” J. Phys. D: Appl. Phys., 2023, 56, p. 315101. • A. Li, et al.: “A General Defect Modelling and Simulation-assisted Approach for Fault Isolation in Failure Analysis,” Micron. Reliab., 2022, 139, p. 114805. • J. Li, et al.: “Topical Review: Dislocations in 4H Silicon Carbide,” J. Phys. D: Appl. Phys., 2022, 55, p. 463001. • Y.-X. Lin, et al.: “Electrical Deterioration of 4H-SiC MOS Capacitors due to Bulk and Interface Traps Induced by Proton Irradiation,” Micron Reliab., 2023, 142, p. 114927. • X. Liu, et al.: “Doping-dependent Nucleation of Basal Plane Dislocations in 4H-SiC,” J. Phys. D: Appl. Phys., 2022, 55, p. 334002. • W. Mao, et al.: “Topical Review: Surface Defects in 4H-SiC: Properties, Characterizations and Passivation Schemes,” Semicond. Sci. Technol., 2023, 38, p. 073001.
RkJQdWJsaXNoZXIy MTMyMzg5NA==