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Custer, et al.: “Copper CVD using Liquid Coinjection of (hfac) Cu(TMVS) and TMVS,” Advanced Metallization for ULSI Applications in 1994, Austin, Oct. 4-6, 1994. ABOUT THE AUTHORS Michael DiBattista is the vice president at Varioscale Inc. He is currently focused on large scale deprocessing of advanced node semiconductor devices and laser chemical based fault isolation solutions for 3D heterogenous integrated (3DHI) microsystems. He has worked in the semiconductor industry for 24 years, holding positions at Intel Corp., FEI Company (ThermoFisher), and Qualcomm Inc. that focused on developing tools and technology to support semiconductor physical failure analysis and focused ion beam (FIB) based circuit modification. DiBattista has more than 30 publications in the semiconductor, electron/ion microscopy, and chemical sensor fields and has 12 issued patents. Michael received his Ph.D., M.S.E. and B.S.E. degrees in chemical engineering from the University of Michigan. Matthew M. Mulholland received his B.S. and M.S. in mechanical engineering from The University of New Mexico in 2004. During academic study, he held research positions for NASA’s PURSUE program and collaboration with Sandia National Laboratory on advances of super-plastic material. He is currently a process development engineer at Intel Corp., where he has worked for the last 19 years focusing on next generation sample preparation equipment, tooling, and techniques for enabling circuit editing, failure analysis, and optical probing.
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