edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 25 NO. 2 42 SK hynix plans to begin mass production of LPDDR5T using 1 anm, the fourth generation of the 10 nm technology, in the second half of the year. Meanwhile, SK hynix has, again, integrated the high-K metal gate 2 (HKMG2) process in the latest product that enabled the new product to deliver the best performance, and expects LPDDR5T to lead the market before the development of the next generation LPDDR6. HKMG2 is a next-generation process that uses a material with a high dielectric constant (K) in the insulating film inside DRAM transistors to prevent leakage currents and to improve capacitance. It reduces power consumption while increasing speed. SK hynix had become the industry’s first to integrate the process in mobile DRAM in Nov. 2022. The IT industry forecasts an increasing demand for memory chips with advanced specifications as the 5G smartphone market expands further. In this trend, SK hynix expects the application of LPDDR5T to expand beyond smartphones to artificial intelligence (AI), machine learning and augmented/virtual reality (AR/VR). For more information, visit skhynix.com.
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