edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 25 NO. 2 38 LITERATURE REVIEW The current column comprises peer-reviewed articles published since 2019 on proximity and near-field techniques. These are techniques that require a probe or tip to be in proximity of a surface to be analyzed. These techniques can achieve extremely high resolution, in some cases atomic resolution. Examples include atomic force microscopy (AFM), near scanning optical microscopy (NSOM), scanning probe microscopy (SPM), and scanning thermal microscopy (SThM). Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the e-mail address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: Proximity and Near-field Techniques Michael R. Bruce, Consultant mike.bruce@earthlink.net • M.E. Barber, E.Y. Ma, and Z.X. Shen: “[Review:] Microwave Impedance Microscopy and its Application to Quantum Materials,” Nat. Rev. Phys., 2022, 4, p. 61. • J. Chen and K. Xu: “Applications of Atomic Force Microscopy in Materials, Semiconductors, Polymers, and Medicine: A Minireview,” Instrumentation Science & Technology, 2020, 48, p. 667. • A. Doi, M. Nakajima, S. Masuda, et al.: “Crosssectional Observation in Nanoscale for Si Power MOSFET by Atomic Force Microscopy/Kelvin Probe Force Microscopy/scanning Capacitance Force Microscopy,” Jpn. J. Appl. Phys., 2019, 58, p. SIIA04. • J. Huang, T. Cui, J.-L. Sun, et al.: “Superresolved Discrimination of Nanoscale Defects in Low-dimensional Materials by Near-field Photoluminescence Spectral Imaging,” Opt. Lett., 2022, 47, p. 4227. • F. Hui and M. Lanza: “[Review:] Scanning Probe Microscopy for Advanced Nanoelectronics,” Nat. Electron., 2019, 2, p. 221. • C. Ma, W. Wang, Y. Chen, et al.: “Depth-sensing using AFM Contact-resonance Imaging and Spectroscopy at the Nanoscale,” J. Appl. Phys., 2019, 126, p. 124302. • L. Ma, N. Leng, M. Jin, et al.: “Real-time Imaging of Electromagnetic Fields [in Si Wafers],” Opt. Express, 2022, 30, p. 20431. • R. Marchand, R. Šachl, M. Kalbáč, et al.: “Optical Near-Field Electron Microscopy,” Phys. Rev. Appl., 2021, 16, p. 014008. • K. Pandey, K. Paredis, W. Vandervorst, et al.: “Understanding the Effect of Confinement in Scanning Spreading Resistance Microscopy Measurements,” J. Appl. Phys., 2020, 128, p. 034303. • K. Pürckhauer, S. Maier, A. Merkel, et al.: “Combined Atomic Force Microscope and Scanning Tunneling Microscope with High Optical Access Achieving Atomic Resolution in Ambient Conditions,” Review of Scientific Instruments, 2020, 91, p. 083701. • S.C. Scholten, G.J. Abrahams, B.C. Johnson, et al.: “Imaging [Magnetic] Current Paths in Silicon Photovoltaic Devices with a Quantum Diamond Microscope,” Phys. Rev. Applied, 2022, 18, p. 014041. • H.J. Sharahi, M. Janmaleki, L. Tetard, et al.: “Acoustic Subsurface-atomic Force Microscopy: Threedimensional Imaging at the Nanoscale,” J. Appl. Phys., 2021, 129, p. 030901. • J. Song, Y. Zhou, and B.D. Huey: “3D Structure– property Correlations of Electronic and Energy Materials by Tomographic Atomic Force Microscopy,” Appl. Phys. Lett., 2021, 118, p. 080501. • J. Xu and D. Chen: “Interpreting Kelvin Probe Force Microscopy on Semiconductors by Fourier Analysis,” J. Appl. Phys., 2021, 129, p. 034301. • K Yamasue and Y Cho: “Local Capacitance-voltage Profiling and Deep Level Transient Spectroscopy
RkJQdWJsaXNoZXIy MTMyMzg5NA==