edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 25 NO. 2 32 The EDFAS Education Subcommittee strives for the development and delivery of educational products to the EDFAS membership. Keeping with its strategic focus on reaching a broader audience, including facilitating Q&A and educational exchanges on the ASM Connect platform, the Subcommittee has recently started inviting ISTFA tutorial speakers and others to present short format presentations on selected FA topics. These presentations are now available on ASM Connect in the EDFAS online community. Use the following link: https://bit.ly/40e0ZiA and click on the Educational Tutorials folder within the library tab. An ASM Connect login is required. For this issue, we are highlighting a tutorial by Peter Rickhaus on the topic of on scanning NV magnetometry. Nitrogen-vacancy (NV) centers in diamond leverage on the extreme sensitivity of quantum systems to their environment and offer radically new performance for magnetic EDUCATION NEWS Bhanu P. Sood, NASA Goddard Space Flight Center bhanu.sood@nasa.gov Peter Rickhaus, Qnami peter.rickhaus@qnami.ch SPOTLIGHT ON TUTORIALS sensing. Their ability to detect weak signals unlock new perspectives, for example to characterize magnetic nanostructures as used in magnetic random-access memory (MRAM) technologies. But scanning NV microscopy is not only suited to measure tiny magnetic fields, it can also resolve electrical currents (via their magnetic fields) with unprecedented spatial resolution, thus presenting an opportunity for integrated circuit failure analysis. The presentation can be accessed using the following link: https://bit.ly/3JjkOOw. For additional information on the EDFAS Education Subcommittee, contact Sue Sellers at sue.sellers@ asminternational.org. Fig. 1 The sensor used in scanning NV microscopy has a diamond pillar with a single nitrogen-vacancy, implanted at its apex. Fig. 3 Scanning NV magnetometry is an extremely versatile technique that is able to measure DC and AC currents or tiny magnetic fields from e.g., magnetic random access memory device (MRAM), but also temperature and electrical noise. Fig. 2 The sensor measures stray magnetic fields, e.g., of a current carrying wires, allowing to reconstruct the current density in the wire. Such a measurement is shown in the figure.
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