edfas.org 55 ELECTRONIC DEV ICE FA I LURE ANALYSIS | VOLUME 24 NO . 4 LITERATURE REVIEW The current column comprises a cornucopia of peer-reviewed articles published since 2020 on case studies, system/ board level, packaging, 3D/TSVs, avionics/automotive, power andwide band electronics. Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the e-mail address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: Cornucopia Michael R. Bruce, Consultant mike.bruce@earthlink.net • M.E. Bathen, C.T.-K. Lew, J. Woerle, et al.: “Characterization Methods for Defects and Devices in Silicon Carbide,” J. Appl. Phys., 2022, 131, p. 140903. • X. Cai, A.M. Pham, and M. Koslowski: “Mechanical Failure of Cu-Sn Solder Joints,” J. Electron. Mater., 2021, 50, p. 6006. • Y. Cao, J.W. Pomeroy, M.J. Uren, et al.: “Electric Field Mapping of Wide-bandgap Semiconductor Devices at a Submicrometre Resolution,” Nat. Electron., 2021, 4, p. 478. • Y. Chen, F. Li, K. Li, et al.: “Thermal Fatigue Reliability Improvement of Leadless Ceramic Chip Carrier Solder Joints,” Microelectron. Reliab., 2022, 132, p. 114532. • H. Du, S. Letz, N. Baker, et al.: “Effect of Shortcircuit Degradation on the Remaining useful Lifetime of SiC MOSFETs and its Failure Analysis,” Microelectron. Reliab., 2020, 114, p. 113784. • K. Endo, C. Hongo, N. Chinone, et al.: “Observation of Photoemission Behaviour during Avalanche Breakdown of Insulated Gate Bipolar Transistor with Defect in the Metal Contact,” Microelectron. Reliab., 2021, 125, p. 114365. • Z. Fan, X. Chen, Y. Jiang, et al.: “Effects of Multicracks and Thermal-mechanical Coupled Load on the TSV Reliability,” Microelectron. Reliab., 2022, 131, p. 114499. • S. Gollapudi and I. Omura: “Altitude Dependent Failure Rate Calculation for High Power Semiconductor Devices in Aviation Electronics,” Jpn. J. Appl. Phys., 2021, 60, p. SBBD19. • K. Ishiji, M. Kato, and R. Sugie: “Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography” J. Electron. Mater., 2022, 51, p. 1541. • A. Kawata, K. Murayama, S. Sumitani, et al.: “Design of Automatic Detection Algorithm for Dislocation Contrasts in Birefringence Images of SiC Wafers,” Jpn. J. Appl. Phys., 2021, 60, p. SBBD06. • K. Lan, L. Tian, Y. Wei, et al.: “Method of Precise Positioning for Defect Failure Analysis Based on Nano-Probing and EBAC,” IEEE Trans. Device Mater. Rel., 2020, 20, p. 622. • Y. Li and D. Goyal: “Fault Isolation and Failure Analysis of 3D Packaging,” in Y. Li and D. Goyal (eds) 3D Microelectronic Packaging, Springer Series in Advanced Microelectronics, Springer, Singapore, 2021, 64, p. 575. • Z. Li, K. Fushinobu, H. Haketa, et al.: “In-situ Diagnosis of Solder Joint Failure by Means of Thermal Resistance Measurement,” Microelectron. Reliab., 2021, 123, p. 114232. • X. Liu, J. Zhang, B. Xu, et al.: “Deformation of 4H-SiC: The Role of Dopants,” Appl. Phys. Lett., 2022, 120, p. 052105. • Y. Ma, J. Li, F. Dong, et al.: “Power Cycling Failure Analysis of Double Side Cooled IGBT Modules for Automotive Applications,” Microelectron. Reliab., 2021, 124, p. 114282.
RkJQdWJsaXNoZXIy MTMyMzg5NA==