August_EDFA_Digital

edfas.org 51 ELECTRONIC DEV ICE FA I LURE ANALYSIS | VOLUME 24 NO . 3 LITERATURE REVIEW T he current column comprises peer-reviewed articles published since 2018 on beam-based analysis techniques. This includes atomic, electron, neutron, ion, and x-ray beam technologies as well as atom probe tomography. These technologies typically offer the highest resolution, sometimes down to the atomic level; in addition, focused ion beams are fundamental to inspection and modifying electronic circuits. Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the e-mail address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: Beam-based Analysis Techniques Michael R. Bruce, Consultant mike.bruce@earthlink.net • D.S. Ashby, D. Garland, M.G. Esposito, et al.: “Identification of Localized Radiation Damage in Power MOSFETs using EBIC Imaging,” Appl. Phys. Lett., 2021, 118, p. 202104. • J.-N. Audinot, P. Philipp, O. De Castro, et al.: “Review: Highest Resolution Chemical Imaging Based on Secondary Ion Mass Spectrometry Performed on the Helium Ion Microscope,” Rep. Prog. Phys., 2021, 84, p. 105901. • A. Ceguerra, A. Breen, J. Cairney, et al.: “Integrative Atom Probe Tomography using Scanning Transmission Electron Microscopy-Centric Atom Placement as a Step Toward Atomic-Scale Tomography,” Microscopy and Microanalysis, 2021, 27, p. 140. • Z. Chen, Y.I. Jiang, Y.-T. Shao, et al.: “Electron Ptychography Achieves Atomic-resolution Limits set by Lattice Vibrations,” Science, 2021, 372, p. 826. • A.P. Conlan, G. Moldovan, L. Bruas, et al.: “Electron Beam Induced Current Microscopy of Silicon p–n Junctions in a Scanning Transmission Electron Microscope,” J. Appl. Phys., 2021, 129, p. 135701. • L. Cornet, L. Yedra, E. Héripré, et al.: “In situ TEM Characterization of Phase Transformations and Kirkendall Void Formation During Annealing of a Cu–Au–Sn–Cu Diffusion Bonding Joint,” J. Electron. Mater., 2022, 51, p. 1568. • O. Dyck, J. Swett, C. Evangeli, et al.: “Contrast Mechanisms in Secondary Electron e-Beam- Induced Current (SEEBIC) Imaging,” Microscopy and Microanalysis, 2022, p. 1; accessed at https://doi. org/10.1017/S1431927622000824. • C. Fletcher, M.P. Moody, and D. Haley: “Towards Model-driven Reconstruction in Atom Probe Tomography,” J. Phys. D: Appl. Phys., 2020, 53, p. 475303. • Y. Goh, J. Schwartz, E. Rennich, et al.: “Contamination of TEM Holders Quantified and Mitigated With the Open-Hardware, High-Vacuum Bakeout System,” Microscopy and Microanalysis, 2020, 26, p. 906. • M. Holler, M. Odstrcil, M. Guizar-Sicairos, et al.: “Three-dimensional Imaging of Integrated Circuits with Macro- to Nanoscale Zoom [Using X-ray Laminography for 18.9nm Resolution],” Nat Electron, 2019, 2, p. 4649; also see “Chips Under the Microscope,” Nature Electronics, 2019, 2, p. 429. • D. Hunter, S. Lavery, P. Edwards, et al.: “Assessing the Impact of Secondary Fluorescence on X-Ray Microanalysis Results from Semiconductor Thin Films,” Microscopy and Microanalysis, 2022, p. 1, accessed at https://doi.org/10.1017/ S1431927622000770. • M. Jacob, J. Sorel, R.B. Pinhiero, et al.: “Correlative STEM-HAADF and STEM-EDX Tomography for the 3D Morphological and Chemical Analysis of Semiconductor Devices,” Semicond. Sci. Technol., 2021, 36, p. 035006. • K. Kino, T. Itoh, T. Fujiwara, et al.: “Nondestructive Quantitative Imaging for Spatially Nonuniform