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edfas.org ELECTRONIC DEV ICE FA I LURE ANALYSIS | VOLUME 24 NO . 2 14 repositioning command, the sample is automatically positioned so that the area of interest is centered in the Fig. 6 Probes placed on source, gate, and drain of a 5 nm-node device. Left: SEM image obtained using an acceleration voltage of 90 V. Right: Measurement results. Fig. 5 Left: Sample positioned at region of interest, focused on the probe tips. Right: Same situation as in the left image, focus placed on the sample. The difference in height between the probe tips and the sample is roughly 10 µm. Fig. 4 Eight probe tips aligned on a tight circle (electron beam acceleration voltage: 100 V). SEM frame and it is raised so that the distance between the probe tips and the sample is just a few µm (Fig. 5). Finally, after once more optimizing the image, the probe tips are manually placed on the desired contacts or metal lines. When the probe tips are in position, any series of measurements can be executed, depending on the task at hand. Most commonly, the probe tips are used to characterize individual transistors by placing probe tips on a transistor’s terminals. An SEM image of such a con- figuration aswell as the recorded transistor characteristics are shown in Fig. 6. This workflow is used to probe on the latest tech- nologies at beam voltages of 100 V and below. Figure 7 shows an example of eight probes on a TSMC 7 nm device imaged at an acceleration of 80 eV while using a very short dwell time for the electron beam, which yields a live image for the microscope's operator.