May_EDFA_Digital

edfas.org 1 ELECTRONIC DEV ICE FA I LURE ANALYSIS | VOLUME 24 NO . 2 DEPARTMENTS Nanoprobing at Low Beam Energy, Addressing Current and Future Nodes Andreas Rummel and Andrew Jonathan Smith As the structures in semiconductor devices continue to shrink, analyzing individual transistors using nanoprobing techniques becomes more and more challenging. Author Guidelines Author guidelines and a sample article are available at edfas.org . Potential authors should consult the guidelines for useful information prior to manuscript preparation. 4 12 A RESOURCE FOR TECHNICAL INFORMATION AND INDUSTRY DEVELOPMENTS MAY 2022 | VOLUME 24 | ISSUE 2 edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS 2 GUEST EDITORIAL Renee S. Parente 34 UNIVERSITY HIGHLIGHT Aydin Aysu, et al. 38 EDUCATION NEWS Bhanu Sood 40 2022 PHOTO CONTEST 41 2022 VIDEO CONTEST 42 DIRECTORY OF FA PROVIDERS Rosalinda Ring 44 TRAINING CALENDAR Rosalinda Ring 46 LITERATURE REVIEW Michael R. Bruce 48 PRODUCT NEWS Ted Kolasa 50 INTERNET RESOURCES Rosalinda Ring 51 GUEST COLUMN Nicholas Antoniou 52 ADVERTISERS INDEX Sample Preparation for Dopant Profiling of Advanced Node FinFET Devices with Scanning Capacitance Microscopy Nirmal Adhikari, Phil Kaszuba, Gaitan Mathieu, and Daminda Dahanayaka This article looks at a sample-preparation technique based on low-energy and low-angle ion milling to target an individual location-specific fin for dopant related analyses. 18 For the digital edition, log in to edfas.org , click on the “News/Magazines” tab, and select “EDFA Magazine.” Challenges for System Supplier Failure Analysis on Subsystem Components Xuming Deng, Weidong Huang, Changhong Yu, Xiongjian Wu, Yang Xu, Xiaole Zhao, and Qing Gu A case study looks at why subsystem suppliers need to understand how their subsystems are used, assembled, and tested at the system level. 12 4 18 24 Physical Security Roadmap for Heterogeneous Integration Technology Aslam A. Khan, Chengji Xi, and Navid Asadizanjani A discussion of IC packaging’s interconnection technol- ogy development and a comprehensive study of optical attacks and how to combat them. 24 ABOUT THE COVER STEM image reveals silicon stacking faults anddislocations that have punched through the reverse pn-junction under the drain contact of an NMOSFET, which caused drain to source leakage with no applied gate bias. A darkfield detector and a large camera length were used to achieve the weak-beam diffraction contrast. Photo by Wentao Qin, ON Semiconductor, First Place Winner in Black and White Images, 2021 EDFAS Photo Contest.