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edfas.org ELECTRONIC DEV ICE FA I LURE ANALYSIS | VOLUME 24 NO . 1 28 20. S. Weiss and R. Kassing: “Deep Level Transient Fourier Spec- troscopy (DLTFS)—A Technique for the Analysis of Deep Level Properties,” Solid-StateElectron., 1988, 31, p. 1733–1742, doi:10.1016/ 0038-1101(88)90071-8. 21. E. Bano, et al.: “Surface Potential Fluctuations in Metal–oxide– semiconductor Capacitors Fabricated on Different Silicon Carbide Polytypes,” Appl. Phys. Lett., 1994, 65, p. 2723–2724, doi:10.1063/1.112547. 22. K. Yamasue, Y. Yamagishi, and Y. Cho: “Influence of Non-Uniform Interface Defect Clustering on Field-Effect Mobility in SiC MOSFETs Investigated by Local Deep Level Transient Spectroscopy andDevice Simulation,” Mater. Sci. Forum, 2020, 1004, p. 627-634, doi:10.4028/ www.scientific.net/MSF.1004.627. ABOUT THE AUTHOR YasuoCho is a professor at TohokuUniversity, Japan. Cho graduated fromthe engineering depart- ment of TohokuUniversity in 1980. In 1985, he became a research associate at the Research Institute of Electrical Communication, TohokuUniversity, and subsequently accepted an associate professorship position at Yamaguchi University in 1990. He later was named an associate professor at the Tohoku University Research Institute of Electrical Communication in 1997 and a full professor in 2001. During this time, his main research interests have included nonlinear phenomena in ferroelectric materials and their applications, the development of novel methods of evaluating ferroelectric, dielectric, and semiconductor materials and devices based on scanning nonlinear dielectric microscopy (SNDM), and the applications of SNDM for next-generation ultrahigh density ferroelectric data storage. SIMULTANEOUS LOCAL CAPACITANCE-VOLTAGE PROFILING (continued from page 25)