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edfas.org ELECTRONIC DEV ICE FA I LURE ANALYSIS | VOLUME 23 NO . 2 48 • A. Srinivasan, W. Han, and A. Khursheed: “Secondary Electron Energy Contrast [using SEM] of Localized Buried Charge in Metal–Insulator–Silicon Struc- tures,” Microsc. and Microanal., 2018, 24 (5), p. 453. • F. Vurpillot, C. Hatzoglou, B. Radiguet, et al.: “Enhancing Element Identification by Expectation–Maximization Method in Atom Probe Tomography,” Microsc. and Microanal., 2019, 25 (2), p. 367. • B. Wang, T. Wang, A. Haque, et al.: “In-situ TEM Study of Domain Switching in GaN Thin Films,” Appl. Phys. Lett., 2017, 111, p. 113103. • J. Yamasaki, S. Morishita, Y. Shimaoka, et al.: “Phase Imaging and Atomic-Resolution Imaging by Electron Diffractive Imaging [in a TEM],” Jpn. J. Appl. Phys., 2019, 58, p. 120502. • K. Yasui, M. Osaki, A. Miyamoto, et al.: “Three- Dimensional Structure Recognition of Circuit Patterns on Semiconductor Devices Using Multiple SEM Images Detected in Different Electron Scattering Angles,” Microelectron. Reliab., 2020, 108, p. 113628. • Z. Zhu and S. Pang: “Few-Photon Computed X-Ray Imaging,” Appl. Phys. Lett., 2018, 113, p. 231109. • M. Zotta, M. Nevins, R. Hailstone, et al.: “The Determination and Application of the Point Spread Function in the Scanning Electron Microscope,” Microsc. and Microanal., 2018, 24 (4), p. 396.