May_EDFA_Digital

edfas.org 47 ELECTRONIC DEV ICE FA I LURE ANALYSIS | VOLUME 23 NO . 2 LITERATURE REVIEW T his column covers peer-reviewedarticles published since 2017 onbeam-basedanalysis techniques: including atomic, electron, neutron, ion, and x-ray beam technologies as well as atom probe tomography (APT). These technologies typically offer the highest resolution, sometimes down to the atomic level. In addition, focused ion beams (FIB) are fundamental to inspection and modifying electronic circuits. More entries were provided in the November 2020 and February 2021 issues of EDFA. Note that inclusion in this list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the above email address and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article topic. Peer-Reviewed Literature of Interest to Failure Analysis: Beam-Based Analysis Techniques: Part III Michael R. Bruce, Consultant mike.bruce@earthlink.net • H. Morishita, T. Ohshima, M. Kuwahara, et al.: “Resolution Improvement of Low-Voltage Scanning Electron Microscope by Bright and Monochromatic Electron Gun using Negative Electron Affinity Photocathode,” J. Appl. Phys., 2020, 127, p. 164902. • G. Naresh-Kumar, D. Thomson, Y. Zhang, et al.: “Imaging Basal Plane Stacking Faults and Dislocations in (11-22) GaN using Electron Channelling Contrast Imaging [in a SEM],” J. Appl. Phys., 2018, 124, p. 065301. • D. Newbury and N. Ritchie: “Electron-Excited X-ray Microanalysis by Energy Dispersive Spectrometry at 50: Analytical Accuracy, Precision, Trace Sensi- tivity, and Quantitative Compositional Mapping,” Microsc. and Microanal., 2019, 25 (5), p. 1075. • M. Nord, R. Webster, K. Paton, et al.: “Fast Pixelated Detectors in Scanning Transmission Electron Microscopy. Part I: Data Acquisition, Live Processing, and Storage,” Microsc. and Microanal., 2020, 26 (4), p. 653. • P. Parikh, C. Senowitz, D. Lyons, et al.: “Three- Dimensional Nanoscale Mapping of State-of- the-Art [14nm] Field-Effect Transistors (FinFETs) [using APT and STEM-EDS],” Microsc. and Microanal., 2017, 23 (5), p. 916. • Z. Peng, Y. Lu, C. Hatzoglou, et al.: “An Automated Computational Approach for Complete In-Plane Compositional Interface Analysis by Atom Probe Tomography,” Microsc. and Microanal., 2019, 25 (2), p. 389. • A. Portavoce, K. Hoummada, and L. Chow: “Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements,” Microsc. and Microanal., 2019, 25 (2), p. 517. • T. Prosa, S. Strennen, D. Olson, et al.: “A Study of Parameters Affecting Atom Probe Tomography Specimen Survivability,” Microsc. and Microanal., 2019, 25 (2), p. 425. • W. Rickard, S. Reddy, D. Saxey, et al.: “Novel Applications of FIB-SEM-Based ToF-SIMS in Atom Probe Tomography Workflows,” Microsc. and Microanal., 2020, 26 (4), p. 750. • N. Ritchie: “Embracing Uncertainty: Modeling the Standard Uncertainty in Electron Probe Microanalysis—Part I,” Microsc. and Microanal., 2020, 26 (3), p. 469. • F. Rovaris, M.H. Zoellner, P. Zaumseil, et al.: “Misfit- Dislocation Distributions in Heteroepitaxy: FromMesoscale Measurements to Individual Defects and Back [in SiGe/Si Films Using TEM and Scanning-X-Ray-Diffraction-Microscopy],” Phys. Rev. Applied, 2018, 10, p. 054067. • K. Shimomura, M. Hirose, T. Higashino, et al.: “Multislice Imaging of Integrated Circuits by X-ray Ptychography,” Microsc. and Microanal., 2018, 24 (S2), p. 24.