The 49th International Symposium for Testing and Failure Analysis (ISTFA), the premier conference and exhibition for the microelectronics failure analysis community, is scheduled for November 12 -16 in Phoenix. This year’s theme—Moving Toward Reliable Power Electronic Devices—will be evident throughout the event in user group meetings, technical presentations, and keynote. The conference also includes the highly popular EDFAS video and photo contests. ISTFA once again o ers the opportunity to take an immersive half- or full-day educational course. This year’s tutorial program extends the learning process to a wider selection of topics. The technical sessions feature over 100 presentations of original unpublished work in areas such as sample preparation and device deprocessing, fault isolation, AI applications for FA, scanning probe analysis, and emerging FA techniques and concepts. And the Expo features key companies showcasing the best technologies and products in the industry. ISTFA’s keynote speaker, Dr. Peter Friedrichs, Vice President of SiC Infineon, received his Ph.D. from the Fraunhofer Institute for Integrated Sytems and Device Technology in Erlangen, Germany, where his focus area of expertise was on physics of the MOS interface in SiC. He’ll provide insights into aspects that impact the long-term reliability and failure modes of SiC power devices in various applications. Phoenix Convention Center NOVEMBER 12–16, 2023 | PHOENIX, ARIZONA 49TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS 2023 ORGANIZED BY: istfaevent.org education workshops: • EDA – FA Instructor: Dr. Steven H. Voldman • Beam-based Defect Localization Instructor: Dr. Ed Cole, Jr., FASM • FA of Electronic Devices Instructor: Martine Simard-Normandin For dates, times, and full course descriptions, visit istfaevent.org. tutorials An expanded tutorial program addresses 29 topics, including 16 new ones. KEYNOTE SESSION Tuesday, November 14 Dr. Peter Friedrichs, Vice President, SiC Infineon, will talk on “Wide Band Gap Power Devices and Related Robustness and Reliability Aspects.” Friedrichs will discuss the many advantages that silicon carbide (SiC) devices o er, especially in power-conversion circuits for applications where e iciency is at a premium. sponsored by:
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